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Article: High breakdown electric field in β-Ga2O3/graphene vertical barristor heterostructure

TitleHigh breakdown electric field in β-Ga<inf>2</inf>O<inf>3</inf>/graphene vertical barristor heterostructure
Authors
Yan, XiaodongEsqueda, Ivan S.Ma, JiahuiTice, JesseWang, Han
Issue Date2018
Citation
Applied Physics Letters, 2018, v. 112, n. 3, article no. 032101 How to Cite?
DOI: http://dx.doi.org/10.1063/1.5002138
AbstractIn this work, we study the high critical breakdown field in β-Ga2O3 perpendicular to its (100) crystal plane using a β-Ga2O3/graphene vertical heterostructure. Measurements indicate a record breakdown field of 5.2 MV/cm perpendicular to the (100) plane that is significantly larger than the previously reported values on lateral β-Ga2O3 field-effect-transistors (FETs). This result is compared with the critical field typically measured within the (100) crystal plane, and the observed anisotropy is explained through a combined theoretical and experimental analysis.
Persistent Identifierhttp://hdl.handle.net/10722/335300
ISSN
0003-6951
2023 Impact Factor: 3.5
2023 SCImago Journal Rankings: 0.976
ISI Accession Number ID
WOS:000423027300022

 

DC FieldValueLanguage
dc.contributor.authorYan, Xiaodong-
dc.contributor.authorEsqueda, Ivan S.-
dc.contributor.authorMa, Jiahui-
dc.contributor.authorTice, Jesse-
dc.contributor.authorWang, Han-
dc.date.accessioned2023-11-17T08:24:44Z-
dc.date.available2023-11-17T08:24:44Z-
dc.date.issued2018-
dc.identifier.citationApplied Physics Letters, 2018, v. 112, n. 3, article no. 032101-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10722/335300-
dc.description.abstractIn this work, we study the high critical breakdown field in β-Ga2O3 perpendicular to its (100) crystal plane using a β-Ga2O3/graphene vertical heterostructure. Measurements indicate a record breakdown field of 5.2 MV/cm perpendicular to the (100) plane that is significantly larger than the previously reported values on lateral β-Ga2O3 field-effect-transistors (FETs). This result is compared with the critical field typically measured within the (100) crystal plane, and the observed anisotropy is explained through a combined theoretical and experimental analysis.-
dc.languageeng-
dc.relation.ispartofApplied Physics Letters-
dc.titleHigh breakdown electric field in β-Ga<inf>2</inf>O<inf>3</inf>/graphene vertical barristor heterostructure-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1063/1.5002138-
dc.identifier.scopuseid_2-s2.0-85040737876-
dc.identifier.volume112-
dc.identifier.issue3-
dc.identifier.spagearticle no. 032101-
dc.identifier.epagearticle no. 032101-
dc.identifier.isiWOS:000423027300022-

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