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Article: Interlayer interactions in anisotropic atomically thin rhenium diselenide

TitleInterlayer interactions in anisotropic atomically thin rhenium diselenide
Authors
Keywordsanisotropy
photoluminescence
Raman
rhenium diselenide
Issue Date2015
Citation
Nano Research, 2015, v. 8, n. 11, p. 3651-3661 How to Cite?
AbstractIn this work, we study the interlayer phonon vibration modes, the layer-numberdependent optical bandgap, and the anisotropic photoluminescence (PL) spectra of atomically thin rhenium diselenide (ReSe2) for the first time. The ultralow frequency interlayer Raman spectra and the polarization-resolved high frequency Raman spectra in ReSe2 allow the identification of its layer number and crystal orientation. Furthermore, PL measurements show the anisotropic optical emission intensity of the material with its bandgap increasing from 1.26 eV in the bulk to 1.32 eV in the monolayer. The study of the layer-number dependence of the Raman modes and the PL spectra reveals relatively weak van der Waal’s interaction and two-dimensional (2D) quantum confinement in the atomically thin ReSe2. The experimental observation of the intriguing anisotropic interlayer interaction and tunable optical transition in monolayer and multilayer ReSe2 establishes the foundation for further exploration of this material in the development of anisotropic optoelectronic devices functioning in the near-infrared spectrum, which is important for many applications in optical communication and infrared sensing. [Figure not available: see fulltext.]
Persistent Identifierhttp://hdl.handle.net/10722/335258
ISSN
2023 Impact Factor: 9.5
2023 SCImago Journal Rankings: 2.539
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorZhao, Huan-
dc.contributor.authorWu, Jiangbin-
dc.contributor.authorZhong, Hongxia-
dc.contributor.authorGuo, Qiushi-
dc.contributor.authorWang, Xiaomu-
dc.contributor.authorXia, Fengnian-
dc.contributor.authorYang, Li-
dc.contributor.authorTan, Pingheng-
dc.contributor.authorWang, Han-
dc.date.accessioned2023-11-17T08:24:22Z-
dc.date.available2023-11-17T08:24:22Z-
dc.date.issued2015-
dc.identifier.citationNano Research, 2015, v. 8, n. 11, p. 3651-3661-
dc.identifier.issn1998-0124-
dc.identifier.urihttp://hdl.handle.net/10722/335258-
dc.description.abstractIn this work, we study the interlayer phonon vibration modes, the layer-numberdependent optical bandgap, and the anisotropic photoluminescence (PL) spectra of atomically thin rhenium diselenide (ReSe2) for the first time. The ultralow frequency interlayer Raman spectra and the polarization-resolved high frequency Raman spectra in ReSe2 allow the identification of its layer number and crystal orientation. Furthermore, PL measurements show the anisotropic optical emission intensity of the material with its bandgap increasing from 1.26 eV in the bulk to 1.32 eV in the monolayer. The study of the layer-number dependence of the Raman modes and the PL spectra reveals relatively weak van der Waal’s interaction and two-dimensional (2D) quantum confinement in the atomically thin ReSe2. The experimental observation of the intriguing anisotropic interlayer interaction and tunable optical transition in monolayer and multilayer ReSe2 establishes the foundation for further exploration of this material in the development of anisotropic optoelectronic devices functioning in the near-infrared spectrum, which is important for many applications in optical communication and infrared sensing. [Figure not available: see fulltext.]-
dc.languageeng-
dc.relation.ispartofNano Research-
dc.subjectanisotropy-
dc.subjectphotoluminescence-
dc.subjectRaman-
dc.subjectrhenium diselenide-
dc.titleInterlayer interactions in anisotropic atomically thin rhenium diselenide-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1007/s12274-015-0865-0-
dc.identifier.scopuseid_2-s2.0-84946491983-
dc.identifier.volume8-
dc.identifier.issue11-
dc.identifier.spage3651-
dc.identifier.epage3661-
dc.identifier.eissn1998-0000-
dc.identifier.isiWOS:000364576400022-

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