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Article: Black Arsenic-Phosphorus: Layered Anisotropic Infrared Semiconductors with Highly Tunable Compositions and Properties

TitleBlack Arsenic-Phosphorus: Layered Anisotropic Infrared Semiconductors with Highly Tunable Compositions and Properties
Authors
Liu, BiluKöpf, MarianneAbbas, Ahmad N.Wang, XiaomuGuo, QiushiJia, YichenXia, FengnianWeihrich, RichardBachhuber, FrederikPielnhofer, FlorianWang, HanDhall, RohanCronin, Stephen B.Ge, MingyuanFang, XinNilges, TomZhou, Chongwu
Keywordsanisotropic
band gaps
black arsenic
black phosphorus
infrared semiconductors
layered materials
Issue Date2015
Citation
Advanced Materials, 2015, v. 27, n. 30, p. 4423-4429 How to Cite?
DOI: http://dx.doi.org/10.1002/adma.201501758
AbstractNew layered anisotropic infrared semiconductors, black arsenic-phosphorus (b-AsP), with highly tunable chemical compositions and electronic and optical properties are introduced. Transport and infrared absorption studies demonstrate the semiconducting nature of b-AsP with tunable bandgaps, ranging from 0.3 to 0.15 eV. These bandgaps fall into the long-wavelength infrared regime and cannot be readily reached by other layered materials.
Persistent Identifierhttp://hdl.handle.net/10722/335255
ISSN
0935-9648
2023 Impact Factor: 27.4
2023 SCImago Journal Rankings: 9.191
ISI Accession Number ID
WOS:000359347300005

 

DC FieldValueLanguage
dc.contributor.authorLiu, Bilu-
dc.contributor.authorKöpf, Marianne-
dc.contributor.authorAbbas, Ahmad N.-
dc.contributor.authorWang, Xiaomu-
dc.contributor.authorGuo, Qiushi-
dc.contributor.authorJia, Yichen-
dc.contributor.authorXia, Fengnian-
dc.contributor.authorWeihrich, Richard-
dc.contributor.authorBachhuber, Frederik-
dc.contributor.authorPielnhofer, Florian-
dc.contributor.authorWang, Han-
dc.contributor.authorDhall, Rohan-
dc.contributor.authorCronin, Stephen B.-
dc.contributor.authorGe, Mingyuan-
dc.contributor.authorFang, Xin-
dc.contributor.authorNilges, Tom-
dc.contributor.authorZhou, Chongwu-
dc.date.accessioned2023-11-17T08:24:20Z-
dc.date.available2023-11-17T08:24:20Z-
dc.date.issued2015-
dc.identifier.citationAdvanced Materials, 2015, v. 27, n. 30, p. 4423-4429-
dc.identifier.issn0935-9648-
dc.identifier.urihttp://hdl.handle.net/10722/335255-
dc.description.abstractNew layered anisotropic infrared semiconductors, black arsenic-phosphorus (b-AsP), with highly tunable chemical compositions and electronic and optical properties are introduced. Transport and infrared absorption studies demonstrate the semiconducting nature of b-AsP with tunable bandgaps, ranging from 0.3 to 0.15 eV. These bandgaps fall into the long-wavelength infrared regime and cannot be readily reached by other layered materials.-
dc.languageeng-
dc.relation.ispartofAdvanced Materials-
dc.subjectanisotropic-
dc.subjectband gaps-
dc.subjectblack arsenic-
dc.subjectblack phosphorus-
dc.subjectinfrared semiconductors-
dc.subjectlayered materials-
dc.titleBlack Arsenic-Phosphorus: Layered Anisotropic Infrared Semiconductors with Highly Tunable Compositions and Properties-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1002/adma.201501758-
dc.identifier.scopuseid_2-s2.0-84938744993-
dc.identifier.volume27-
dc.identifier.issue30-
dc.identifier.spage4423-
dc.identifier.epage4429-
dc.identifier.eissn1521-4095-
dc.identifier.isiWOS:000359347300005-

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