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Article: Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition

TitleElectronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition
Authors
Issue Date2014
Citation
Nature Communications, 2014, v. 5, article no. 3087 How to Cite?
AbstractLayered transition metal dichalcogenides display a wide range of attractive physical and chemical properties and are potentially important for various device applications. Here we report the electronic transport and device properties of monolayer molybdenum disulphide grown by chemical vapour deposition. We show that these devices have the potential to suppress short channel effects and have high critical breakdown electric field. However, our study reveals that the electronic properties of these devices are at present severely limited by the presence of a significant amount of band tail trapping states. Through capacitance and ac conductance measurements, we systematically quantify the density-of-states and response time of these states. Because of the large amount of trapped charges, the measured effective mobility also leads to a large underestimation of the true band mobility and the potential of the material. Continual engineering efforts on improving the sample quality are needed for its potential applications.
Persistent Identifierhttp://hdl.handle.net/10722/335236
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorZhu, Wenjuan-
dc.contributor.authorLow, Tony-
dc.contributor.authorLee, Yi Hsien-
dc.contributor.authorWang, Han-
dc.contributor.authorFarmer, Damon B.-
dc.contributor.authorKong, Jing-
dc.contributor.authorXia, Fengnian-
dc.contributor.authorAvouris, Phaedon-
dc.date.accessioned2023-11-17T08:24:11Z-
dc.date.available2023-11-17T08:24:11Z-
dc.date.issued2014-
dc.identifier.citationNature Communications, 2014, v. 5, article no. 3087-
dc.identifier.urihttp://hdl.handle.net/10722/335236-
dc.description.abstractLayered transition metal dichalcogenides display a wide range of attractive physical and chemical properties and are potentially important for various device applications. Here we report the electronic transport and device properties of monolayer molybdenum disulphide grown by chemical vapour deposition. We show that these devices have the potential to suppress short channel effects and have high critical breakdown electric field. However, our study reveals that the electronic properties of these devices are at present severely limited by the presence of a significant amount of band tail trapping states. Through capacitance and ac conductance measurements, we systematically quantify the density-of-states and response time of these states. Because of the large amount of trapped charges, the measured effective mobility also leads to a large underestimation of the true band mobility and the potential of the material. Continual engineering efforts on improving the sample quality are needed for its potential applications.-
dc.languageeng-
dc.relation.ispartofNature Communications-
dc.titleElectronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1038/ncomms4087-
dc.identifier.scopuseid_2-s2.0-84894608525-
dc.identifier.volume5-
dc.identifier.spagearticle no. 3087-
dc.identifier.epagearticle no. 3087-
dc.identifier.eissn2041-1723-
dc.identifier.isiWOS:000331084200029-

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