File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Impact of graphene interface quality on contact resistance and RF device performance

TitleImpact of graphene interface quality on contact resistance and RF device performance
Authors
KeywordsChemical vapor deposition (CVD) graphene
contact resistance
radio frequency (RF)
thin-film transistors
Issue Date2011
Citation
IEEE Electron Device Letters, 2011, v. 32, n. 8, p. 1008-1010 How to Cite?
AbstractThis letter demonstrates the importance of the graphene/metal interface on the ohmic contacts of high-frequency graphene transistors grown by chemical vapor deposition (CVD) on copper. Using an Al sacrificial layer during ohmic lithography, the graphene surface roughness underneath the ohmic contacts is reduced by fourfold, resulting in an improvement in the contact resistance from 2.0 to 0.2-0.5 kΩ.μm. Using this technology, top-gated CVD graphene transistors achieved direct-current transconductances of 200 mS/mm, maximum on current densities in excess of 1000 mA/mm, and hole mobilities ∼ 1500-3000 cm-2Vs on silicon substrates. Radio-frequency device performance yielded an extrinsic current-gain cutoff frequency fT of 12 GHz after pad capacitance de-embedding resulting in an fT-LG product of 24 GHzμm. © 2011 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/335210
ISSN
2023 Impact Factor: 4.1
2023 SCImago Journal Rankings: 1.250
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorHsu, Allen-
dc.contributor.authorWang, Han-
dc.contributor.authorKim, Ki Kang-
dc.contributor.authorKong, Jing-
dc.contributor.authorPalacios, Tomás-
dc.date.accessioned2023-11-17T08:23:58Z-
dc.date.available2023-11-17T08:23:58Z-
dc.date.issued2011-
dc.identifier.citationIEEE Electron Device Letters, 2011, v. 32, n. 8, p. 1008-1010-
dc.identifier.issn0741-3106-
dc.identifier.urihttp://hdl.handle.net/10722/335210-
dc.description.abstractThis letter demonstrates the importance of the graphene/metal interface on the ohmic contacts of high-frequency graphene transistors grown by chemical vapor deposition (CVD) on copper. Using an Al sacrificial layer during ohmic lithography, the graphene surface roughness underneath the ohmic contacts is reduced by fourfold, resulting in an improvement in the contact resistance from 2.0 to 0.2-0.5 kΩ.μm. Using this technology, top-gated CVD graphene transistors achieved direct-current transconductances of 200 mS/mm, maximum on current densities in excess of 1000 mA/mm, and hole mobilities ∼ 1500-3000 cm-2Vs on silicon substrates. Radio-frequency device performance yielded an extrinsic current-gain cutoff frequency fT of 12 GHz after pad capacitance de-embedding resulting in an fT-LG product of 24 GHzμm. © 2011 IEEE.-
dc.languageeng-
dc.relation.ispartofIEEE Electron Device Letters-
dc.subjectChemical vapor deposition (CVD) graphene-
dc.subjectcontact resistance-
dc.subjectradio frequency (RF)-
dc.subjectthin-film transistors-
dc.titleImpact of graphene interface quality on contact resistance and RF device performance-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/LED.2011.2155024-
dc.identifier.scopuseid_2-s2.0-79960926454-
dc.identifier.volume32-
dc.identifier.issue8-
dc.identifier.spage1008-
dc.identifier.epage1010-
dc.identifier.isiWOS:000293710400005-

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats