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Article: High frequency performance of graphene transistors grown by chemical vapor deposition for mixed signal applications

TitleHigh frequency performance of graphene transistors grown by chemical vapor deposition for mixed signal applications
Authors
Issue Date2011
Citation
Japanese Journal of Applied Physics, 2011, v. 50, n. 7 PART 1, article no. 070114 How to Cite?
AbstractThis paper demonstrates high frequency performance of graphene transistors grown by chemical vapor deposition on copper foils. Using Ti/Pd/ Au-based ohmic contacts and a hybrid gate dielectric stack of 5 nm SiO2 and 15nm Al2O3 grown by atomic layer deposition, graphene transistors with an extrinsic current-gain cut-off frequency (fT) of 2 GHz and power-gain cut-off frequency, fmax, of 5.6GHz were obtained for a gate length of Lg = 1.6 μm. By applying a bias to the Si substrate the access resistances are reduced, which improved the fT and fmax in the devices to 3.5 and 6.5 GHz, respectively. Finally we demonstrate these devices in a real-application circuit for binary-phase shift keying. © 2011 The Japan Society of Applied Physics.
Persistent Identifierhttp://hdl.handle.net/10722/335209
ISSN
2023 Impact Factor: 1.5
2023 SCImago Journal Rankings: 0.307
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorHsu, Allen-
dc.contributor.authorWang, Han-
dc.contributor.authorKim, Ki Kang-
dc.contributor.authorKong, Jing-
dc.contributor.authorPalacios, Tomás-
dc.date.accessioned2023-11-17T08:23:57Z-
dc.date.available2023-11-17T08:23:57Z-
dc.date.issued2011-
dc.identifier.citationJapanese Journal of Applied Physics, 2011, v. 50, n. 7 PART 1, article no. 070114-
dc.identifier.issn0021-4922-
dc.identifier.urihttp://hdl.handle.net/10722/335209-
dc.description.abstractThis paper demonstrates high frequency performance of graphene transistors grown by chemical vapor deposition on copper foils. Using Ti/Pd/ Au-based ohmic contacts and a hybrid gate dielectric stack of 5 nm SiO2 and 15nm Al2O3 grown by atomic layer deposition, graphene transistors with an extrinsic current-gain cut-off frequency (fT) of 2 GHz and power-gain cut-off frequency, fmax, of 5.6GHz were obtained for a gate length of Lg = 1.6 μm. By applying a bias to the Si substrate the access resistances are reduced, which improved the fT and fmax in the devices to 3.5 and 6.5 GHz, respectively. Finally we demonstrate these devices in a real-application circuit for binary-phase shift keying. © 2011 The Japan Society of Applied Physics.-
dc.languageeng-
dc.relation.ispartofJapanese Journal of Applied Physics-
dc.titleHigh frequency performance of graphene transistors grown by chemical vapor deposition for mixed signal applications-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1143/JJAP.50.070114-
dc.identifier.scopuseid_2-s2.0-79960684578-
dc.identifier.volume50-
dc.identifier.issue7 PART 1-
dc.identifier.spagearticle no. 070114-
dc.identifier.epagearticle no. 070114-
dc.identifier.eissn1347-4065-
dc.identifier.isiWOS:000292878200014-

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