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Article: AlInN HEMT grown on SiC by metalorganic vapor phase epitaxy for millimeter-wave applications
Title | AlInN HEMT grown on SiC by metalorganic vapor phase epitaxy for millimeter-wave applications |
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Authors | |
Keywords | 2DEG AlInN Heterojunction High mobility electron transistor Movpe |
Issue Date | 2010 |
Citation | Physica Status Solidi (A) Applications and Materials Science, 2010, v. 207, n. 6, p. 1348-1352 How to Cite? |
Abstract | In this work we present the epitaxial and device results of AlInN/GaN HEMTs grown on SiC by metalorganic vapor phase epitaxy. High quality AlInN/GaN HEMT structures with sub-10 nm AlInN barrier were grown with very low Ga background level (<1%). The low R sh of 215Ω/sq was obtained with an excellent standard deviation of 1.1% across 300 wafers. Lehighton RT contactless Hall tests show a high mobility of 1617 cm 2/V s and sheet charge density of 1.76×10 13/cm 2. DC characteristics of an AlInN/GaN HEMT with a gate length of 0.1mm and 25 nm Al 2O 3 passivation show maximum drain current (I DS,max) of 2.36 A/mm at V GS=2V. Gate recessed devices with 0.15μm gate length and 25 nm Al 2O 3 passivation resulted in maximum transconductance (g m) of 675 mS/mm, the highest value ever reported in AlInN transistors. Excellent frequency response was obtained. The maximum f T is 86 GHz and f max is 91.7 GHz. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. |
Persistent Identifier | http://hdl.handle.net/10722/335197 |
ISSN | 2023 Impact Factor: 1.9 2023 SCImago Journal Rankings: 0.443 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Guo, Shiping | - |
dc.contributor.author | Gao, Xiang | - |
dc.contributor.author | Gorka, Daniel | - |
dc.contributor.author | Chung, Jinwoork W. | - |
dc.contributor.author | Wang, Han | - |
dc.contributor.author | Palacios, Tomas | - |
dc.contributor.author | Crespo, Antonio | - |
dc.contributor.author | Gillespie, James K. | - |
dc.contributor.author | Chabak, Kelson | - |
dc.contributor.author | Trejo, Manuel | - |
dc.contributor.author | Miller, Virginia | - |
dc.contributor.author | Bellot, Mark | - |
dc.contributor.author | Via, Glen | - |
dc.contributor.author | Kossler, Mauricio | - |
dc.contributor.author | Smith, Howard | - |
dc.contributor.author | Tomich, David | - |
dc.date.accessioned | 2023-11-17T08:23:52Z | - |
dc.date.available | 2023-11-17T08:23:52Z | - |
dc.date.issued | 2010 | - |
dc.identifier.citation | Physica Status Solidi (A) Applications and Materials Science, 2010, v. 207, n. 6, p. 1348-1352 | - |
dc.identifier.issn | 1862-6300 | - |
dc.identifier.uri | http://hdl.handle.net/10722/335197 | - |
dc.description.abstract | In this work we present the epitaxial and device results of AlInN/GaN HEMTs grown on SiC by metalorganic vapor phase epitaxy. High quality AlInN/GaN HEMT structures with sub-10 nm AlInN barrier were grown with very low Ga background level (<1%). The low R sh of 215Ω/sq was obtained with an excellent standard deviation of 1.1% across 300 wafers. Lehighton RT contactless Hall tests show a high mobility of 1617 cm 2/V s and sheet charge density of 1.76×10 13/cm 2. DC characteristics of an AlInN/GaN HEMT with a gate length of 0.1mm and 25 nm Al 2O 3 passivation show maximum drain current (I DS,max) of 2.36 A/mm at V GS=2V. Gate recessed devices with 0.15μm gate length and 25 nm Al 2O 3 passivation resulted in maximum transconductance (g m) of 675 mS/mm, the highest value ever reported in AlInN transistors. Excellent frequency response was obtained. The maximum f T is 86 GHz and f max is 91.7 GHz. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. | - |
dc.language | eng | - |
dc.relation.ispartof | Physica Status Solidi (A) Applications and Materials Science | - |
dc.subject | 2DEG | - |
dc.subject | AlInN | - |
dc.subject | Heterojunction | - |
dc.subject | High mobility electron transistor | - |
dc.subject | Movpe | - |
dc.title | AlInN HEMT grown on SiC by metalorganic vapor phase epitaxy for millimeter-wave applications | - |
dc.type | Article | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1002/pssa.200983621 | - |
dc.identifier.scopus | eid_2-s2.0-77954308507 | - |
dc.identifier.volume | 207 | - |
dc.identifier.issue | 6 | - |
dc.identifier.spage | 1348 | - |
dc.identifier.epage | 1352 | - |
dc.identifier.eissn | 1862-6319 | - |
dc.identifier.isi | WOS:000279989000019 | - |