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Article: Phononic real Chern insulator with protected corner modes in graphynes

TitlePhononic real Chern insulator with protected corner modes in graphynes
Authors
Issue Date2022
Citation
Physical Review B, 2022, v. 105, n. 8, article no. 085123 How to Cite?
AbstractHigher-order topological insulators have attracted great research interest recently. Different from conventional topological insulators, higher-order topological insulators do not necessarily require spin-orbit coupling, which makes it possible to realize them in spinless systems. Here, we study phonons in 2D graphyne family materials. By using first-principle calculations and topology/symmetry analysis, we find that phonons in both graphdiyne and ?-graphyne exhibit a second-order topology, which belongs to the specific case known as real Chern insulator. We identify the nontrivial phononic band gaps, which are characterized by nontrivial real Chern numbers enabled by the spacetime inversion symmetry. The protected phonon corner modes are verified by the calculation on a finite-size nanodisk. In addition, we show that a 3D real Chern insulator state can be realized for phonons in 3D graphdiyne. Our study extends the scope of higher-order topology to phonons in real materials. The spatially localized phonon modes could be useful for novel phononic applications.
Persistent Identifierhttp://hdl.handle.net/10722/335040
ISSN
2023 Impact Factor: 3.2
2023 SCImago Journal Rankings: 1.345
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorZhu, Jiaojiao-
dc.contributor.authorWu, Weikang-
dc.contributor.authorZhao, Jianzhou-
dc.contributor.authorChen, Cong-
dc.contributor.authorWang, Qianqian-
dc.contributor.authorSheng, Xian Lei-
dc.contributor.authorZhang, Lifa-
dc.contributor.authorZhao, Y. X.-
dc.contributor.authorYang, Shengyuan A.-
dc.date.accessioned2023-10-24T08:28:39Z-
dc.date.available2023-10-24T08:28:39Z-
dc.date.issued2022-
dc.identifier.citationPhysical Review B, 2022, v. 105, n. 8, article no. 085123-
dc.identifier.issn2469-9950-
dc.identifier.urihttp://hdl.handle.net/10722/335040-
dc.description.abstractHigher-order topological insulators have attracted great research interest recently. Different from conventional topological insulators, higher-order topological insulators do not necessarily require spin-orbit coupling, which makes it possible to realize them in spinless systems. Here, we study phonons in 2D graphyne family materials. By using first-principle calculations and topology/symmetry analysis, we find that phonons in both graphdiyne and ?-graphyne exhibit a second-order topology, which belongs to the specific case known as real Chern insulator. We identify the nontrivial phononic band gaps, which are characterized by nontrivial real Chern numbers enabled by the spacetime inversion symmetry. The protected phonon corner modes are verified by the calculation on a finite-size nanodisk. In addition, we show that a 3D real Chern insulator state can be realized for phonons in 3D graphdiyne. Our study extends the scope of higher-order topology to phonons in real materials. The spatially localized phonon modes could be useful for novel phononic applications.-
dc.languageeng-
dc.relation.ispartofPhysical Review B-
dc.titlePhononic real Chern insulator with protected corner modes in graphynes-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1103/PhysRevB.105.085123-
dc.identifier.scopuseid_2-s2.0-85125263968-
dc.identifier.volume105-
dc.identifier.issue8-
dc.identifier.spagearticle no. 085123-
dc.identifier.epagearticle no. 085123-
dc.identifier.eissn2469-9969-
dc.identifier.isiWOS:000761167100004-

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