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Article: A new scanning probe lithography scheme with a novel metal resist

TitleA new scanning probe lithography scheme with a novel metal resist
Authors
Issue Date2002
Citation
Advanced Materials, 2002, v. 14, n. 3, p. 191-194 How to Cite?
AbstractThe scope of scanning probe lithography (SPL) as a technique for nanofabrication at the nanometer resolution level was discussed. The technique was used for patterning of silicon using Mo as a metal resist. Atomic force microscopy was used for image analysis due to its simplicity, lower requirements and ability for high-resolution real-space imaging. The use of water as chemical etchant made the process compatible with biological systems. The strategy can be used for nanoscale patterning of biological molecules.
Persistent Identifierhttp://hdl.handle.net/10722/334928
ISSN
2023 Impact Factor: 27.4
2023 SCImago Journal Rankings: 9.191
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorRolandi, M.-
dc.contributor.authorQuate, C. F.-
dc.contributor.authorDai, H.-
dc.date.accessioned2023-10-20T06:51:47Z-
dc.date.available2023-10-20T06:51:47Z-
dc.date.issued2002-
dc.identifier.citationAdvanced Materials, 2002, v. 14, n. 3, p. 191-194-
dc.identifier.issn0935-9648-
dc.identifier.urihttp://hdl.handle.net/10722/334928-
dc.description.abstractThe scope of scanning probe lithography (SPL) as a technique for nanofabrication at the nanometer resolution level was discussed. The technique was used for patterning of silicon using Mo as a metal resist. Atomic force microscopy was used for image analysis due to its simplicity, lower requirements and ability for high-resolution real-space imaging. The use of water as chemical etchant made the process compatible with biological systems. The strategy can be used for nanoscale patterning of biological molecules.-
dc.languageeng-
dc.relation.ispartofAdvanced Materials-
dc.titleA new scanning probe lithography scheme with a novel metal resist-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1002/1521-4095(20020205)14:3<191::AID-ADMA191>3.0.CO;2-7-
dc.identifier.scopuseid_2-s2.0-0037022409-
dc.identifier.volume14-
dc.identifier.issue3-
dc.identifier.spage191-
dc.identifier.epage194-
dc.identifier.isiWOS:000173839000002-

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