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Article: Thickness effect on the stability of unipolar resistance switching in tin ferrite thin films

TitleThickness effect on the stability of unipolar resistance switching in tin ferrite thin films
Authors
KeywordsAmorphous
Forming voltage
RRAM
SnFe O 2 4
Stability
Issue Date2016
Citation
Current Applied Physics, 2016, v. 16, n. 9, p. 980-984 How to Cite?
AbstractWe report the reproducible unipolar resistance switching behavior in Pt/SnFe2O4/Pt structures. The amorphous SnFe2O4 thin film was spin-coated on the Pt/TiO2/SiO2/Si substrate by a sol-gel method. The current-voltage characterization showed that as the spin coating cycles increased, the resistive switching (RS) characteristics became stable, and an excellent RS performance showing uniform set voltage distribution, stable resistance of both low resistance and high resistance states, and narrow reset current distribution can be obtained in SFO films with a thickness about 220 nm. Based on the conducting filament model, the variation of the RS behavior was ascribed to the increase of the electroforming voltage in the thicker films, which consequently induced more oxygen vacancies to participate in the RS process. Our results indicated that the electroforming voltage performs a significant role in the RS properties of the amorphous SnFe2O4 and the optimized RS behavior through the regulation of preparation process can be used for the resistance random access memory applications.
Persistent Identifierhttp://hdl.handle.net/10722/334439
ISSN
2023 Impact Factor: 2.4
2023 SCImago Journal Rankings: 0.511
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorGong, Guodong-
dc.contributor.authorWu, Changjin-
dc.contributor.authorHu, Pengfei-
dc.contributor.authorLi, Ying-
dc.contributor.authorKwon, Namic-
dc.contributor.authorLiu, Chunli-
dc.date.accessioned2023-10-20T06:48:09Z-
dc.date.available2023-10-20T06:48:09Z-
dc.date.issued2016-
dc.identifier.citationCurrent Applied Physics, 2016, v. 16, n. 9, p. 980-984-
dc.identifier.issn1567-1739-
dc.identifier.urihttp://hdl.handle.net/10722/334439-
dc.description.abstractWe report the reproducible unipolar resistance switching behavior in Pt/SnFe2O4/Pt structures. The amorphous SnFe2O4 thin film was spin-coated on the Pt/TiO2/SiO2/Si substrate by a sol-gel method. The current-voltage characterization showed that as the spin coating cycles increased, the resistive switching (RS) characteristics became stable, and an excellent RS performance showing uniform set voltage distribution, stable resistance of both low resistance and high resistance states, and narrow reset current distribution can be obtained in SFO films with a thickness about 220 nm. Based on the conducting filament model, the variation of the RS behavior was ascribed to the increase of the electroforming voltage in the thicker films, which consequently induced more oxygen vacancies to participate in the RS process. Our results indicated that the electroforming voltage performs a significant role in the RS properties of the amorphous SnFe2O4 and the optimized RS behavior through the regulation of preparation process can be used for the resistance random access memory applications.-
dc.languageeng-
dc.relation.ispartofCurrent Applied Physics-
dc.subjectAmorphous-
dc.subjectForming voltage-
dc.subjectRRAM-
dc.subjectSnFe O 2 4-
dc.subjectStability-
dc.titleThickness effect on the stability of unipolar resistance switching in tin ferrite thin films-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/j.cap.2016.05.020-
dc.identifier.scopuseid_2-s2.0-84982128283-
dc.identifier.volume16-
dc.identifier.issue9-
dc.identifier.spage980-
dc.identifier.epage984-
dc.identifier.isiWOS:000384131600011-

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