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Article: Graphene nanoribbons under mechanical strain

TitleGraphene nanoribbons under mechanical strain
Authors
Chen, ChangxinWu, Justin ZacharyLam, Kai TakHong, GuosongGong, MingZhang, BoLu, YangAntaris, Alexander L.Diao, ShuoGuo, JingDai, Hongjie
KeywordsBandgap modulation
Graphene nanoribbon field-effect transistors (gnrfets)
Graphene nanoribbons
Mechanical strain
Raman spectroscopy
Issue Date2015
Citation
Advanced Materials, 2015, v. 27, n. 2, p. 303-309 How to Cite?
DOI: http://dx.doi.org/10.1002/adma.201403750
Abstract(Figure Presented) Uniaxial strains are introduced into individual graphene nanoribbons (GNRs) with highly smooth edges to investigate the strain effects on Raman spectroscopic and electrical properties of GNRs. It is found that uniaxial strain downshifts the Raman G-band frequency of GNRs linearly and tunes their bandgap significantly in a nonmonotonic manner. The strain engineering of GNRs is promising for potential electronics and photonics applications.
Persistent Identifierhttp://hdl.handle.net/10722/334378
ISSN
0935-9648
2021 Impact Factor: 32.086
2020 SCImago Journal Rankings: 10.707

 

DC FieldValueLanguage
dc.contributor.authorChen, Changxin-
dc.contributor.authorWu, Justin Zachary-
dc.contributor.authorLam, Kai Tak-
dc.contributor.authorHong, Guosong-
dc.contributor.authorGong, Ming-
dc.contributor.authorZhang, Bo-
dc.contributor.authorLu, Yang-
dc.contributor.authorAntaris, Alexander L.-
dc.contributor.authorDiao, Shuo-
dc.contributor.authorGuo, Jing-
dc.contributor.authorDai, Hongjie-
dc.date.accessioned2023-10-20T06:47:43Z-
dc.date.available2023-10-20T06:47:43Z-
dc.date.issued2015-
dc.identifier.citationAdvanced Materials, 2015, v. 27, n. 2, p. 303-309-
dc.identifier.issn0935-9648-
dc.identifier.urihttp://hdl.handle.net/10722/334378-
dc.description.abstract(Figure Presented) Uniaxial strains are introduced into individual graphene nanoribbons (GNRs) with highly smooth edges to investigate the strain effects on Raman spectroscopic and electrical properties of GNRs. It is found that uniaxial strain downshifts the Raman G-band frequency of GNRs linearly and tunes their bandgap significantly in a nonmonotonic manner. The strain engineering of GNRs is promising for potential electronics and photonics applications.-
dc.languageeng-
dc.relation.ispartofAdvanced Materials-
dc.subjectBandgap modulation-
dc.subjectGraphene nanoribbon field-effect transistors (gnrfets)-
dc.subjectGraphene nanoribbons-
dc.subjectMechanical strain-
dc.subjectRaman spectroscopy-
dc.titleGraphene nanoribbons under mechanical strain-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1002/adma.201403750-
dc.identifier.scopuseid_2-s2.0-84920728807-
dc.identifier.volume27-
dc.identifier.issue2-
dc.identifier.spage303-
dc.identifier.epage309-
dc.identifier.eissn1521-4095-

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