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Article: Room-temperature edge functionalization and doping of graphene by mild plasma

TitleRoom-temperature edge functionalization and doping of graphene by mild plasma
Authors
Kato, ToshiakiJiao, LiyingWang, XinranWang, HailiangLi, XiaolinZhang, LiHatakeyama, RikizoDai, Hongjie
Keywordsdoping
edge functionalization
graphene
nanoribbons
plasma
Issue Date2011
Citation
Small, 2011, v. 7, n. 5, p. 574-577 How to Cite?
DOI: http://dx.doi.org/10.1002/smll.201002146
AbstractA direct correlation between carrier doping and selective edge functionalization is revealed for graphene treated with a mild NH3 plasma. Raman mapping analysis shows that the D-peak near the edge of the graphene sheet selectively increases after plasma treatment. Electrical measurements show that the Dirac point position of a graphene nanoribbon device shifts toward a negative gate-bias voltage. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Persistent Identifierhttp://hdl.handle.net/10722/334232
ISSN
1613-6810
2023 Impact Factor: 13.0
2023 SCImago Journal Rankings: 3.348
ISI Accession Number ID
WOS:000288081900004

 

DC FieldValueLanguage
dc.contributor.authorKato, Toshiaki-
dc.contributor.authorJiao, Liying-
dc.contributor.authorWang, Xinran-
dc.contributor.authorWang, Hailiang-
dc.contributor.authorLi, Xiaolin-
dc.contributor.authorZhang, Li-
dc.contributor.authorHatakeyama, Rikizo-
dc.contributor.authorDai, Hongjie-
dc.date.accessioned2023-10-20T06:46:40Z-
dc.date.available2023-10-20T06:46:40Z-
dc.date.issued2011-
dc.identifier.citationSmall, 2011, v. 7, n. 5, p. 574-577-
dc.identifier.issn1613-6810-
dc.identifier.urihttp://hdl.handle.net/10722/334232-
dc.description.abstractA direct correlation between carrier doping and selective edge functionalization is revealed for graphene treated with a mild NH3 plasma. Raman mapping analysis shows that the D-peak near the edge of the graphene sheet selectively increases after plasma treatment. Electrical measurements show that the Dirac point position of a graphene nanoribbon device shifts toward a negative gate-bias voltage. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.-
dc.languageeng-
dc.relation.ispartofSmall-
dc.subjectdoping-
dc.subjectedge functionalization-
dc.subjectgraphene-
dc.subjectnanoribbons-
dc.subjectplasma-
dc.titleRoom-temperature edge functionalization and doping of graphene by mild plasma-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1002/smll.201002146-
dc.identifier.pmid21370457-
dc.identifier.scopuseid_2-s2.0-79952205635-
dc.identifier.volume7-
dc.identifier.issue5-
dc.identifier.spage574-
dc.identifier.epage577-
dc.identifier.eissn1613-6829-
dc.identifier.isiWOS:000288081900004-

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