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- Publisher Website: 10.1038/nchem.719
- Scopus: eid_2-s2.0-77954905132
- PMID: 20651729
- WOS: WOS:000280199500017
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Article: Etching and narrowing of graphene from the edges
Title | Etching and narrowing of graphene from the edges |
---|---|
Authors | |
Issue Date | 2010 |
Citation | Nature Chemistry, 2010, v. 2, n. 8, p. 661-665 How to Cite? |
Abstract | Large-scale graphene electronics requires lithographic patterning of narrow graphene nanoribbons for device integration. However, conventional lithography can only reliably pattern ∼20-nm-wide GNR arrays limited by lithography resolution, while sub-5-nm GNRs are desirable for high on/off ratio field-effect transistors at room temperature. Here, we devised a gas phase chemical approach to etch graphene from the edges without damaging its basal plane. The reaction involved high temperature oxidation of graphene in a slightly reducing environment in the presence of ammonia to afford controlled etch rate (≤1 nm min-1). We fabricated ∼20-30-nm-wide graphene nanoribbon arrays lithographically, and used the gas phase etching chemistry to narrow the ribbons down to <10 nm. For the first time a high on/off ratio up to ∼10 4 was achieved at room temperature for field-effect transistors built with sub-5-nm-wide graphene nanoribbon semiconductors derived from lithographic patterning and narrowing. Our controlled etching method opens up a chemical way to control the size of various graphene nano-structures beyond the capability of top-down lithography. © 2010 Macmillan Publishers Limited. All rights reserved. |
Persistent Identifier | http://hdl.handle.net/10722/334218 |
ISSN | 2023 Impact Factor: 19.2 2023 SCImago Journal Rankings: 6.940 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Wang, Xinran | - |
dc.contributor.author | Dai, Hongjie | - |
dc.date.accessioned | 2023-10-20T06:46:34Z | - |
dc.date.available | 2023-10-20T06:46:34Z | - |
dc.date.issued | 2010 | - |
dc.identifier.citation | Nature Chemistry, 2010, v. 2, n. 8, p. 661-665 | - |
dc.identifier.issn | 1755-4330 | - |
dc.identifier.uri | http://hdl.handle.net/10722/334218 | - |
dc.description.abstract | Large-scale graphene electronics requires lithographic patterning of narrow graphene nanoribbons for device integration. However, conventional lithography can only reliably pattern ∼20-nm-wide GNR arrays limited by lithography resolution, while sub-5-nm GNRs are desirable for high on/off ratio field-effect transistors at room temperature. Here, we devised a gas phase chemical approach to etch graphene from the edges without damaging its basal plane. The reaction involved high temperature oxidation of graphene in a slightly reducing environment in the presence of ammonia to afford controlled etch rate (≤1 nm min-1). We fabricated ∼20-30-nm-wide graphene nanoribbon arrays lithographically, and used the gas phase etching chemistry to narrow the ribbons down to <10 nm. For the first time a high on/off ratio up to ∼10 4 was achieved at room temperature for field-effect transistors built with sub-5-nm-wide graphene nanoribbon semiconductors derived from lithographic patterning and narrowing. Our controlled etching method opens up a chemical way to control the size of various graphene nano-structures beyond the capability of top-down lithography. © 2010 Macmillan Publishers Limited. All rights reserved. | - |
dc.language | eng | - |
dc.relation.ispartof | Nature Chemistry | - |
dc.title | Etching and narrowing of graphene from the edges | - |
dc.type | Article | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1038/nchem.719 | - |
dc.identifier.pmid | 20651729 | - |
dc.identifier.scopus | eid_2-s2.0-77954905132 | - |
dc.identifier.volume | 2 | - |
dc.identifier.issue | 8 | - |
dc.identifier.spage | 661 | - |
dc.identifier.epage | 665 | - |
dc.identifier.eissn | 1755-4349 | - |
dc.identifier.isi | WOS:000280199500017 | - |