File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Projected performance advantage of multilayer graphene nanoribbons as a transistor channel material

TitleProjected performance advantage of multilayer graphene nanoribbons as a transistor channel material
Authors
KeywordsCarbon nanotube (CNT)
Field-effect transistor
Graphene nanoribbon (GNR)
Multilayer graphene
New channel material
Issue Date2010
Citation
Nano Research, 2010, v. 3, n. 1, p. 8-15 How to Cite?
AbstractThe performance limits of a multilayer graphene nanoribbon (GNR) field-effect transistor (FET) are assessed and compared with those of a monolayer GNRFET and a carbon nanotube (CNT) FET. The results show that with a thin high dielectric constant (high-κ) gate insulator and reduced interlayer coupling, a multilayer GNRFET can significantly outperform its CNT counterpart with a similar gate and bandgap in terms of the ballistic on-current. In the presence of optical phonon scattering, which has a short mean free path in the graphene-derived nanostructures, the advantage of the multilayer GNRFET is even more significant. Simulation results indicate that multilayer GNRs with incommensurate non-AB stacking and weak interlayer coupling are the best candidates for high-performance GNRFETs. © The Author(s) 2010.
Persistent Identifierhttp://hdl.handle.net/10722/334209
ISSN
2023 Impact Factor: 9.5
2023 SCImago Journal Rankings: 2.539
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorOuyang, Yijian-
dc.contributor.authorDai, Hongjie-
dc.contributor.authorGuo, Jing-
dc.date.accessioned2023-10-20T06:46:30Z-
dc.date.available2023-10-20T06:46:30Z-
dc.date.issued2010-
dc.identifier.citationNano Research, 2010, v. 3, n. 1, p. 8-15-
dc.identifier.issn1998-0124-
dc.identifier.urihttp://hdl.handle.net/10722/334209-
dc.description.abstractThe performance limits of a multilayer graphene nanoribbon (GNR) field-effect transistor (FET) are assessed and compared with those of a monolayer GNRFET and a carbon nanotube (CNT) FET. The results show that with a thin high dielectric constant (high-κ) gate insulator and reduced interlayer coupling, a multilayer GNRFET can significantly outperform its CNT counterpart with a similar gate and bandgap in terms of the ballistic on-current. In the presence of optical phonon scattering, which has a short mean free path in the graphene-derived nanostructures, the advantage of the multilayer GNRFET is even more significant. Simulation results indicate that multilayer GNRs with incommensurate non-AB stacking and weak interlayer coupling are the best candidates for high-performance GNRFETs. © The Author(s) 2010.-
dc.languageeng-
dc.relation.ispartofNano Research-
dc.subjectCarbon nanotube (CNT)-
dc.subjectField-effect transistor-
dc.subjectGraphene nanoribbon (GNR)-
dc.subjectMultilayer graphene-
dc.subjectNew channel material-
dc.titleProjected performance advantage of multilayer graphene nanoribbons as a transistor channel material-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1007/s12274-010-1002-8-
dc.identifier.scopuseid_2-s2.0-74049159928-
dc.identifier.volume3-
dc.identifier.issue1-
dc.identifier.spage8-
dc.identifier.epage15-
dc.identifier.eissn1998-0000-
dc.identifier.isiWOS:000273940100002-

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats