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Conference Paper: Carbon nanotubes: From growth, placement and assembly control to 60mV/decade and sub-60 mV/decade tunnel transistors

TitleCarbon nanotubes: From growth, placement and assembly control to 60mV/decade and sub-60 mV/decade tunnel transistors
Authors
Issue Date2006
Citation
Technical Digest - International Electron Devices Meeting, IEDM, 2006, article no. 4154223 How to Cite?
AbstractThis paper presents recent progress on placement and orientation control of single-walled carbon nanotubes (SWNTs) by both CVD and PECVD growth in electric fields and on single crystal quartz substrates, and post-growth Langmuir Bloddget assembly of close-packed SWNTs. We also present fabrication of nanotube field effect-transistors (FETs) including MOSFET like devices with 60mV/decade switching and ambipolar P-I-N band-to-band tunnel (BTBT) transistors with subthreshold swings down to 25mV/decade.
Persistent Identifierhttp://hdl.handle.net/10722/334175
ISSN
2023 SCImago Journal Rankings: 1.047

 

DC FieldValueLanguage
dc.contributor.authorZhang, Guangyu-
dc.contributor.authorWang, Xinran-
dc.contributor.authorLi, Xiaolin-
dc.contributor.authorLu, Yuerui-
dc.contributor.authorJavey, Ali-
dc.contributor.authorDai, Hongjie-
dc.date.accessioned2023-10-20T06:46:16Z-
dc.date.available2023-10-20T06:46:16Z-
dc.date.issued2006-
dc.identifier.citationTechnical Digest - International Electron Devices Meeting, IEDM, 2006, article no. 4154223-
dc.identifier.issn0163-1918-
dc.identifier.urihttp://hdl.handle.net/10722/334175-
dc.description.abstractThis paper presents recent progress on placement and orientation control of single-walled carbon nanotubes (SWNTs) by both CVD and PECVD growth in electric fields and on single crystal quartz substrates, and post-growth Langmuir Bloddget assembly of close-packed SWNTs. We also present fabrication of nanotube field effect-transistors (FETs) including MOSFET like devices with 60mV/decade switching and ambipolar P-I-N band-to-band tunnel (BTBT) transistors with subthreshold swings down to 25mV/decade.-
dc.languageeng-
dc.relation.ispartofTechnical Digest - International Electron Devices Meeting, IEDM-
dc.titleCarbon nanotubes: From growth, placement and assembly control to 60mV/decade and sub-60 mV/decade tunnel transistors-
dc.typeConference_Paper-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/IEDM.2006.346804-
dc.identifier.scopuseid_2-s2.0-46049098613-
dc.identifier.spagearticle no. 4154223-
dc.identifier.epagearticle no. 4154223-

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