Room-temperature all-semiconducting sub-10-nm graphene nanoribbon field-effect transistors

Abstract

Sub-10nm wide graphene nanoribbon field-effect transistors (GNRFETs) are studied systematically. All sub-10nm GNRs afforded semiconducting FETs without exception, with Ion/Ioff ratio up to 106 and on-state current density as high as ∼2000μA/μm. We estimated carrier mobility ∼200cm2/Vs and scattering mean free path ∼10nm in sub-10nm GNRs. Scattering mechanisms by edges, acoustic phonon, and defects are discussed. The sub-10nm GNRFETs are comparable to small diameter (d≤∼1.2nm) carbon nanotube FETs with Pd contacts in on-state current density and Ion/Ioff ratio, but have the advantage of producing all-semiconducting devices. © 2008 The American Physical Society.