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- Publisher Website: 10.1126/science.1133781
- Scopus: eid_2-s2.0-33751000466
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Article: Selective etching of metallic carbon nanotubes by gas-phase reaction
| Title | Selective etching of metallic carbon nanotubes by gas-phase reaction |
|---|---|
| Authors | |
| Issue Date | 2006 |
| Citation | Science, 2006, v. 314, n. 5801, p. 974-977 How to Cite? |
| Abstract | Metallic and semiconducting carbon nanotubes generally coexist in as-grown materials. We present a gas-phase plasma hydrocarbonation reaction to selectively etch and gasify metallic nanotubes, retaining the semiconducting nanotubes in near-pristine form. With this process, 100% of purely semiconducting nanotubes were obtained and connected in parallel for high-current transistors. The diameter- and metallicity-dependent "dry" chemical etching approach is scalable and compatible with existing semiconductor processing for future integrated circuits. |
| Persistent Identifier | http://hdl.handle.net/10722/334133 |
| ISSN | 2023 Impact Factor: 44.7 2023 SCImago Journal Rankings: 11.902 |
| ISI Accession Number ID |
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Zhang, Guangyu | - |
| dc.contributor.author | Qi, Pengfei | - |
| dc.contributor.author | Wang, Xinran | - |
| dc.contributor.author | Lu, Yuerui | - |
| dc.contributor.author | Li, Xiaolin | - |
| dc.contributor.author | Tu, Ryan | - |
| dc.contributor.author | Bangsaruntip, Sarunya | - |
| dc.contributor.author | Mann, David | - |
| dc.contributor.author | Zhang, Li | - |
| dc.contributor.author | Dai, Hongjie | - |
| dc.date.accessioned | 2023-10-20T06:45:58Z | - |
| dc.date.available | 2023-10-20T06:45:58Z | - |
| dc.date.issued | 2006 | - |
| dc.identifier.citation | Science, 2006, v. 314, n. 5801, p. 974-977 | - |
| dc.identifier.issn | 0036-8075 | - |
| dc.identifier.uri | http://hdl.handle.net/10722/334133 | - |
| dc.description.abstract | Metallic and semiconducting carbon nanotubes generally coexist in as-grown materials. We present a gas-phase plasma hydrocarbonation reaction to selectively etch and gasify metallic nanotubes, retaining the semiconducting nanotubes in near-pristine form. With this process, 100% of purely semiconducting nanotubes were obtained and connected in parallel for high-current transistors. The diameter- and metallicity-dependent "dry" chemical etching approach is scalable and compatible with existing semiconductor processing for future integrated circuits. | - |
| dc.language | eng | - |
| dc.relation.ispartof | Science | - |
| dc.title | Selective etching of metallic carbon nanotubes by gas-phase reaction | - |
| dc.type | Article | - |
| dc.description.nature | link_to_subscribed_fulltext | - |
| dc.identifier.doi | 10.1126/science.1133781 | - |
| dc.identifier.scopus | eid_2-s2.0-33751000466 | - |
| dc.identifier.volume | 314 | - |
| dc.identifier.issue | 5801 | - |
| dc.identifier.spage | 974 | - |
| dc.identifier.epage | 977 | - |
| dc.identifier.eissn | 1095-9203 | - |
| dc.identifier.isi | WOS:000241896000047 | - |