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Article: Electrical contacts to carbon nanotubes down to 1 nm in diameter

TitleElectrical contacts to carbon nanotubes down to 1 nm in diameter
Authors
Issue Date2005
Citation
Applied Physics Letters, 2005, v. 87, n. 17, p. 1-3 How to Cite?
AbstractRhodium (Rh) is found similar to Palladium (Pd) in making near-Ohmic electrical contacts to single-walled carbon nanotubes (SWNTs) with diameters d>∼1.6 nm. Non-negligible positive Schottky barriers (SBs) exist between Rh or Pd and semiconducting SWNTs (S -SWNTs) with d<∼1.6 nm. With Rh and Pd contacts, the characteristics of SWNT field-effect transistors and SB heights at the contacts are largely predictable based on the SWNT diameters, without random variations among devices. Surprisingly, electrical contacts to metallic SWNTs (M-SWNTs) also appear to be diameter dependent especially for small SWNTs. Ohmic contacts are difficult for M-SWNTs with diameters ≤∼1.0 nm possibly due to tunnel barriers resulted from large perturbation of contacting metal to very small diameter SWNTs due to high chemical reactivity of the latter. © 2005 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/334119
ISSN
2023 Impact Factor: 3.5
2023 SCImago Journal Rankings: 0.976
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorKim, Woong-
dc.contributor.authorJavey, Ali-
dc.contributor.authorTu, Ryan-
dc.contributor.authorCao, Jien-
dc.contributor.authorWang, Qian-
dc.contributor.authorDai, Hongjie-
dc.date.accessioned2023-10-20T06:45:52Z-
dc.date.available2023-10-20T06:45:52Z-
dc.date.issued2005-
dc.identifier.citationApplied Physics Letters, 2005, v. 87, n. 17, p. 1-3-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10722/334119-
dc.description.abstractRhodium (Rh) is found similar to Palladium (Pd) in making near-Ohmic electrical contacts to single-walled carbon nanotubes (SWNTs) with diameters d>∼1.6 nm. Non-negligible positive Schottky barriers (SBs) exist between Rh or Pd and semiconducting SWNTs (S -SWNTs) with d<∼1.6 nm. With Rh and Pd contacts, the characteristics of SWNT field-effect transistors and SB heights at the contacts are largely predictable based on the SWNT diameters, without random variations among devices. Surprisingly, electrical contacts to metallic SWNTs (M-SWNTs) also appear to be diameter dependent especially for small SWNTs. Ohmic contacts are difficult for M-SWNTs with diameters ≤∼1.0 nm possibly due to tunnel barriers resulted from large perturbation of contacting metal to very small diameter SWNTs due to high chemical reactivity of the latter. © 2005 American Institute of Physics.-
dc.languageeng-
dc.relation.ispartofApplied Physics Letters-
dc.titleElectrical contacts to carbon nanotubes down to 1 nm in diameter-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1063/1.2108127-
dc.identifier.scopuseid_2-s2.0-28344446515-
dc.identifier.volume87-
dc.identifier.issue17-
dc.identifier.spage1-
dc.identifier.epage3-
dc.identifier.isiWOS:000232723700050-

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