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Article: High-Field Quasiballistic Transport in Short Carbon Nanotubes

TitleHigh-Field Quasiballistic Transport in Short Carbon Nanotubes
Authors
Javey, AliGuo, JingPaulsson, MagnusWang, QianMann, DavidLundstrom, MarkDai, Hongjie
Issue Date2004
Citation
Physical Review Letters, 2004, v. 92, n. 10, article no. 106804 How to Cite?
DOI: http://dx.doi.org/10.1103/PhysRevLett.92.106804
AbstractThe single walled carbon nanotubes with Pd Ohmic contacts were investigated using high-field quasiballistic transport. The mean-free path (MFP) was estimated to be 300 nm for acoustic phonon scattering and 15 nm for optical phonon scattering. Short nanotubes enabled flow of high currents up to 70 μA. The electrical breakdown mechanisms observed in short nanotubes at high fields were also described. The implications of high-field quasiballistic transport were found to be applicable in high performance nanotube transistors and interconnects.
Persistent Identifierhttp://hdl.handle.net/10722/334106
ISSN
0031-9007
2021 Impact Factor: 9.185
2020 SCImago Journal Rankings: 3.688
ISI Accession Number ID
WOS:000220185600040

 

DC FieldValueLanguage
dc.contributor.authorJavey, Ali-
dc.contributor.authorGuo, Jing-
dc.contributor.authorPaulsson, Magnus-
dc.contributor.authorWang, Qian-
dc.contributor.authorMann, David-
dc.contributor.authorLundstrom, Mark-
dc.contributor.authorDai, Hongjie-
dc.date.accessioned2023-10-20T06:45:40Z-
dc.date.available2023-10-20T06:45:40Z-
dc.date.issued2004-
dc.identifier.citationPhysical Review Letters, 2004, v. 92, n. 10, article no. 106804-
dc.identifier.issn0031-9007-
dc.identifier.urihttp://hdl.handle.net/10722/334106-
dc.description.abstractThe single walled carbon nanotubes with Pd Ohmic contacts were investigated using high-field quasiballistic transport. The mean-free path (MFP) was estimated to be 300 nm for acoustic phonon scattering and 15 nm for optical phonon scattering. Short nanotubes enabled flow of high currents up to 70 μA. The electrical breakdown mechanisms observed in short nanotubes at high fields were also described. The implications of high-field quasiballistic transport were found to be applicable in high performance nanotube transistors and interconnects.-
dc.languageeng-
dc.relation.ispartofPhysical Review Letters-
dc.titleHigh-Field Quasiballistic Transport in Short Carbon Nanotubes-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1103/PhysRevLett.92.106804-
dc.identifier.scopuseid_2-s2.0-2142649257-
dc.identifier.volume92-
dc.identifier.issue10-
dc.identifier.spagearticle no. 106804-
dc.identifier.epagearticle no. 106804-
dc.identifier.isiWOS:000220185600040-

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