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- Publisher Website: 10.1063/1.1872221
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Article: Piezoresistance of carbon nanotubes on deformable thin-film membranes
Title | Piezoresistance of carbon nanotubes on deformable thin-film membranes |
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Authors | |
Issue Date | 2005 |
Citation | Applied Physics Letters, 2005, v. 86, n. 9, p. 1-3 How to Cite? |
Abstract | Carbon nanotubes have interesting electromechanical properties that may enable a new class of nanoscale mechanical sensors. We fabricated two-terminal nanotube devices on silicon nitride membranes, measured their electronic transport versus strain, and estimated their band gaps and the strain-induced changes in them. We found band-gap increases and decreases among both semiconducting and small-gap semiconducting (SGS) tubes. The SGS band gaps exceeded the predicted curvature-induced gaps for their diameter. Some of the band-gap changes for both types of tubes exceeded the predicted maxima. These anomalies are likely caused by interaction with the rough silicon nitride surface. © 2005 American Institute of Physics. |
Persistent Identifier | http://hdl.handle.net/10722/334098 |
ISSN | 2023 Impact Factor: 3.5 2023 SCImago Journal Rankings: 0.976 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Grow, Randal J. | - |
dc.contributor.author | Wang, Qian | - |
dc.contributor.author | Cao, Jien | - |
dc.contributor.author | Wang, Dunwei | - |
dc.contributor.author | Dai, Hongjie | - |
dc.date.accessioned | 2023-10-20T06:45:37Z | - |
dc.date.available | 2023-10-20T06:45:37Z | - |
dc.date.issued | 2005 | - |
dc.identifier.citation | Applied Physics Letters, 2005, v. 86, n. 9, p. 1-3 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10722/334098 | - |
dc.description.abstract | Carbon nanotubes have interesting electromechanical properties that may enable a new class of nanoscale mechanical sensors. We fabricated two-terminal nanotube devices on silicon nitride membranes, measured their electronic transport versus strain, and estimated their band gaps and the strain-induced changes in them. We found band-gap increases and decreases among both semiconducting and small-gap semiconducting (SGS) tubes. The SGS band gaps exceeded the predicted curvature-induced gaps for their diameter. Some of the band-gap changes for both types of tubes exceeded the predicted maxima. These anomalies are likely caused by interaction with the rough silicon nitride surface. © 2005 American Institute of Physics. | - |
dc.language | eng | - |
dc.relation.ispartof | Applied Physics Letters | - |
dc.title | Piezoresistance of carbon nanotubes on deformable thin-film membranes | - |
dc.type | Article | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1063/1.1872221 | - |
dc.identifier.scopus | eid_2-s2.0-17044370480 | - |
dc.identifier.volume | 86 | - |
dc.identifier.issue | 9 | - |
dc.identifier.spage | 1 | - |
dc.identifier.epage | 3 | - |
dc.identifier.isi | WOS:000228991600055 | - |