Carbon nanotube field-effect transistors with integrated ohmic contacts and high-κ gate dielectrics

Abstract

High-performance enhancement-mode semiconducting carbon nanotube field-effect transistors (CNTFETs) are obtained by combining ohmic metal-tube contacts, high-dielectric-constant HfO2 films as gate insulators, and electrostatically doped nanotube segments as source/drain electrodes. The combination of these elements affords high ON currents and subthreshold swings of ∼70-80 mV/decade and allows for low OFF currents and suppressed ambipolar conduction. The doped source and drain approach resembles that of MOSFETs and can impart excellent OFF states to nanotube FETs under aggressive vertical scaling. This presents an important advantage over devices with a metal source/drain, or devices commonly referred to as Schottky barrier FETs.