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Article: Preferential Growth of Semiconducting Single-Walled Carbon Nanotubes by a Plasma Enhanced CVD Method

TitlePreferential Growth of Semiconducting Single-Walled Carbon Nanotubes by a Plasma Enhanced CVD Method
Authors
Issue Date2004
Citation
Nano Letters, 2004, v. 4, n. 2, p. 317-321 How to Cite?
AbstractSingle-walled carbon nanotubes (SWNT) are grown by a plasma enhanced chemical vapor deposition (PECVD) method at 600°C. The nanotubes are of high quality as characterized by microscopy, Raman spectroscopy, and electrical transport measurements. High performance field effect transistors are obtained with the PECVD nanotubes. Interestingly, electrical characterization reveals that nearly 90% of the nanotubes are semiconductors and thus highly preferential growth of semiconducting over metallic tubes in the PECVD process. Control experiments with other nanotube materials find that HiPco nanotubes consist of ∼61% semiconductors, while laser ablation preferentially grows metallic SWNTs (∼70%). The characterization method used here should also be applicable to assessing the degree of chemical separation of metallic and semiconducting nanotubes.
Persistent Identifierhttp://hdl.handle.net/10722/334090
ISSN
2023 Impact Factor: 9.6
2023 SCImago Journal Rankings: 3.411
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLi, Yiming-
dc.contributor.authorMann, David-
dc.contributor.authorRolandi, Marco-
dc.contributor.authorKim, Woong-
dc.contributor.authorUral, Ant-
dc.contributor.authorHung, Steven-
dc.contributor.authorJavey, Ali-
dc.contributor.authorCao, Jien-
dc.contributor.authorWang, Dunwei-
dc.contributor.authorYenilmez, Erhan-
dc.contributor.authorWang, Qian-
dc.contributor.authorGibbons, James F.-
dc.contributor.authorNishi, Yoshio-
dc.contributor.authorDai, Hongjie-
dc.date.accessioned2023-10-20T06:45:34Z-
dc.date.available2023-10-20T06:45:34Z-
dc.date.issued2004-
dc.identifier.citationNano Letters, 2004, v. 4, n. 2, p. 317-321-
dc.identifier.issn1530-6984-
dc.identifier.urihttp://hdl.handle.net/10722/334090-
dc.description.abstractSingle-walled carbon nanotubes (SWNT) are grown by a plasma enhanced chemical vapor deposition (PECVD) method at 600°C. The nanotubes are of high quality as characterized by microscopy, Raman spectroscopy, and electrical transport measurements. High performance field effect transistors are obtained with the PECVD nanotubes. Interestingly, electrical characterization reveals that nearly 90% of the nanotubes are semiconductors and thus highly preferential growth of semiconducting over metallic tubes in the PECVD process. Control experiments with other nanotube materials find that HiPco nanotubes consist of ∼61% semiconductors, while laser ablation preferentially grows metallic SWNTs (∼70%). The characterization method used here should also be applicable to assessing the degree of chemical separation of metallic and semiconducting nanotubes.-
dc.languageeng-
dc.relation.ispartofNano Letters-
dc.titlePreferential Growth of Semiconducting Single-Walled Carbon Nanotubes by a Plasma Enhanced CVD Method-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1021/nl035097c-
dc.identifier.scopuseid_2-s2.0-10744223154-
dc.identifier.volume4-
dc.identifier.issue2-
dc.identifier.spage317-
dc.identifier.epage321-
dc.identifier.isiWOS:000188965700025-

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