File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Germanium nanowire field-effect transistors with SiO2 and high-κ HfO2 gate dielectrics

TitleGermanium nanowire field-effect transistors with SiO<inf>2</inf> and high-κ HfO<inf>2</inf> gate dielectrics
Authors
Issue Date2003
Citation
Applied Physics Letters, 2003, v. 83, n. 12, p. 2432-2434 How to Cite?
AbstractThe synthesis of single-crystal germanium nanowires (GeNW) based field effect transistors (FET) was studied. In respect with it the GeNW FET with thin silicon dioxide gate insulators and high gate dielectrics were constructed. In the GeNW grown devices, the high hole mobility characteristics suggested the device to be of high quality with excellent electrical properties.
Persistent Identifierhttp://hdl.handle.net/10722/334085
ISSN
2023 Impact Factor: 3.5
2023 SCImago Journal Rankings: 0.976
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorWang, Dunwei-
dc.contributor.authorWang, Qian-
dc.contributor.authorJavey, Ali-
dc.contributor.authorTu, Ryan-
dc.contributor.authorDai, Hongjie-
dc.contributor.authorKim, Hyoungsub-
dc.contributor.authorMcIntyre, Paul C.-
dc.contributor.authorKrishnamohan, Tejas-
dc.contributor.authorSaraswat, Krishna C.-
dc.date.accessioned2023-10-20T06:45:32Z-
dc.date.available2023-10-20T06:45:32Z-
dc.date.issued2003-
dc.identifier.citationApplied Physics Letters, 2003, v. 83, n. 12, p. 2432-2434-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10722/334085-
dc.description.abstractThe synthesis of single-crystal germanium nanowires (GeNW) based field effect transistors (FET) was studied. In respect with it the GeNW FET with thin silicon dioxide gate insulators and high gate dielectrics were constructed. In the GeNW grown devices, the high hole mobility characteristics suggested the device to be of high quality with excellent electrical properties.-
dc.languageeng-
dc.relation.ispartofApplied Physics Letters-
dc.titleGermanium nanowire field-effect transistors with SiO<inf>2</inf> and high-κ HfO<inf>2</inf> gate dielectrics-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1063/1.1611644-
dc.identifier.scopuseid_2-s2.0-0142055973-
dc.identifier.volume83-
dc.identifier.issue12-
dc.identifier.spage2432-
dc.identifier.epage2434-
dc.identifier.isiWOS:000185333200044-

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats