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Article: Hysteresis caused by water molecules in carbon nanotube field-effect transistors

TitleHysteresis caused by water molecules in carbon nanotube field-effect transistors
Authors
Issue Date2003
Citation
Nano Letters, 2003, v. 3, n. 2, p. 193-198 How to Cite?
AbstractCarbon nanotube field-effect transistors commonly comprise nanotubes lying on SiO2 surfaces exposed to the ambient environment. It is shown here that the transistors exhibit hysteresis in their electrical characteristics because of charge trapping by water molecules around the nanotubes, including SiO2 surface-bound water proximal to the nanotubes. Hysteresis persists for the transistors in vacuum since the SiO 2-bound water does not completely desorb in vacuum at room temperature, a known phenomenon in SiO2 surface chemistry. Heating under dry conditions significantly removes water and reduces hysteresis in the transistors. Nearly hysteresis-free transistors are obtainable by passivating the devices with polymers that hydrogen bond with silanol groups on SiO 2 (e.g., with poly(methyl methacrylate) (PMMA)). However, nanotube humidity sensors could be explored with suitable water-sensitive coatings. The results may have implications to field-effect transistors made from other chemically derived materials.
Persistent Identifierhttp://hdl.handle.net/10722/334083
ISSN
2023 Impact Factor: 9.6
2023 SCImago Journal Rankings: 3.411
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorKim, Woong-
dc.contributor.authorJavey, Ali-
dc.contributor.authorVermesh, Ophir-
dc.contributor.authorWang, Qian-
dc.contributor.authorLi, Yiming-
dc.contributor.authorDai, Hongjie-
dc.date.accessioned2023-10-20T06:45:31Z-
dc.date.available2023-10-20T06:45:31Z-
dc.date.issued2003-
dc.identifier.citationNano Letters, 2003, v. 3, n. 2, p. 193-198-
dc.identifier.issn1530-6984-
dc.identifier.urihttp://hdl.handle.net/10722/334083-
dc.description.abstractCarbon nanotube field-effect transistors commonly comprise nanotubes lying on SiO2 surfaces exposed to the ambient environment. It is shown here that the transistors exhibit hysteresis in their electrical characteristics because of charge trapping by water molecules around the nanotubes, including SiO2 surface-bound water proximal to the nanotubes. Hysteresis persists for the transistors in vacuum since the SiO 2-bound water does not completely desorb in vacuum at room temperature, a known phenomenon in SiO2 surface chemistry. Heating under dry conditions significantly removes water and reduces hysteresis in the transistors. Nearly hysteresis-free transistors are obtainable by passivating the devices with polymers that hydrogen bond with silanol groups on SiO 2 (e.g., with poly(methyl methacrylate) (PMMA)). However, nanotube humidity sensors could be explored with suitable water-sensitive coatings. The results may have implications to field-effect transistors made from other chemically derived materials.-
dc.languageeng-
dc.relation.ispartofNano Letters-
dc.titleHysteresis caused by water molecules in carbon nanotube field-effect transistors-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1021/nl0259232-
dc.identifier.scopuseid_2-s2.0-0042948502-
dc.identifier.volume3-
dc.identifier.issue2-
dc.identifier.spage193-
dc.identifier.epage198-
dc.identifier.isiWOS:000181001500018-

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