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Article: High-κ dielectrics for advanced carbon-nanotube transistors and logic gates

TitleHigh-κ dielectrics for advanced carbon-nanotube transistors and logic gates
Authors
Issue Date2002
Citation
Nature Materials, 2002, v. 1, n. 4, p. 241-246 How to Cite?
AbstractThe integration of materials having a high dielectric constant (high-κ) into carbon-nanotube transistors promises to push the performance limit for molecular electronics. Here, high-κ (∼25) zirconium oxide thin-films (∼8 nm) are formed on top of individual single-walled carbon nanotubes by atomic-layer deposition and used as gate dielectrics for nanotube field-effect transistors. The p-type transistors exhibit subthreshold swings of S ∼ 70 mV per decade, approaching the room-temperature theoretical limit for field-effect transistors. Key transistor performance parameters, transconductance and carrier mobility reach 6,000 S m-1 (12 μS per tube) and 3,000 cm2 V-1 s-1 respectively. N-type field-effect transistors obtained by annealing the devices in hydrogen exhibit S ∼ 90 mV per decade. High voltage gains of up to 60 are obtained for complementary nanotube-based inverters. The atomic-layer deposition process affords gate insulators with high capacitance while being chemically benign to nanotubes, a key to the integration of advanced dielectrics into molecular electronics.
Persistent Identifierhttp://hdl.handle.net/10722/334071
ISSN
2023 Impact Factor: 37.2
2023 SCImago Journal Rankings: 14.231
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorJavey, Ali-
dc.contributor.authorKim, Hyoungsub-
dc.contributor.authorBrink, Markus-
dc.contributor.authorWang, Qian-
dc.contributor.authorUral, Ant-
dc.contributor.authorGuo, Jing-
dc.contributor.authorMcintyre, Paul-
dc.contributor.authorMceuen, Paul-
dc.contributor.authorLundstrom, Mark-
dc.contributor.authorDai, Hongjie-
dc.date.accessioned2023-10-20T06:45:26Z-
dc.date.available2023-10-20T06:45:26Z-
dc.date.issued2002-
dc.identifier.citationNature Materials, 2002, v. 1, n. 4, p. 241-246-
dc.identifier.issn1476-1122-
dc.identifier.urihttp://hdl.handle.net/10722/334071-
dc.description.abstractThe integration of materials having a high dielectric constant (high-κ) into carbon-nanotube transistors promises to push the performance limit for molecular electronics. Here, high-κ (∼25) zirconium oxide thin-films (∼8 nm) are formed on top of individual single-walled carbon nanotubes by atomic-layer deposition and used as gate dielectrics for nanotube field-effect transistors. The p-type transistors exhibit subthreshold swings of S ∼ 70 mV per decade, approaching the room-temperature theoretical limit for field-effect transistors. Key transistor performance parameters, transconductance and carrier mobility reach 6,000 S m-1 (12 μS per tube) and 3,000 cm2 V-1 s-1 respectively. N-type field-effect transistors obtained by annealing the devices in hydrogen exhibit S ∼ 90 mV per decade. High voltage gains of up to 60 are obtained for complementary nanotube-based inverters. The atomic-layer deposition process affords gate insulators with high capacitance while being chemically benign to nanotubes, a key to the integration of advanced dielectrics into molecular electronics.-
dc.languageeng-
dc.relation.ispartofNature Materials-
dc.titleHigh-κ dielectrics for advanced carbon-nanotube transistors and logic gates-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1038/nmat769-
dc.identifier.pmid12618786-
dc.identifier.scopuseid_2-s2.0-0036974829-
dc.identifier.volume1-
dc.identifier.issue4-
dc.identifier.spage241-
dc.identifier.epage246-
dc.identifier.isiWOS:000181498800022-

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