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Article: Patterned growth of single-walled carbon nanotubes on full 4-inch wafers

TitlePatterned growth of single-walled carbon nanotubes on full 4-inch wafers
Authors
Issue Date2001
Citation
Applied Physics Letters, 2001, v. 79, n. 27, p. 4571-4573 How to Cite?
AbstractPatterned growth of single-walled carbon nanotubes (SWNTs) is achieved on full 4-in. SiO2/Si wafers. Catalytic islands with high uniformity over the entire wafer are obtained by a deep ultraviolet photolithography technique. Growth by chemical vapor deposition of methane is found to be very sensitive to the amount of H2 co-flow. Understanding of the chemistry enables the growth of high quality SWNTs from massive arrays (107-108) of well-defined surface sites. The scale up in patterned nanotube growth shall pave the way to large-scale molecular wire devices. © 2001 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/334066
ISSN
2023 Impact Factor: 3.5
2023 SCImago Journal Rankings: 0.976
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorFranklin, Nathan R.-
dc.contributor.authorLi, Yiming-
dc.contributor.authorChen, Robert J.-
dc.contributor.authorJavey, Ali-
dc.contributor.authorDai, Hongjie-
dc.date.accessioned2023-10-20T06:45:24Z-
dc.date.available2023-10-20T06:45:24Z-
dc.date.issued2001-
dc.identifier.citationApplied Physics Letters, 2001, v. 79, n. 27, p. 4571-4573-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10722/334066-
dc.description.abstractPatterned growth of single-walled carbon nanotubes (SWNTs) is achieved on full 4-in. SiO2/Si wafers. Catalytic islands with high uniformity over the entire wafer are obtained by a deep ultraviolet photolithography technique. Growth by chemical vapor deposition of methane is found to be very sensitive to the amount of H2 co-flow. Understanding of the chemistry enables the growth of high quality SWNTs from massive arrays (107-108) of well-defined surface sites. The scale up in patterned nanotube growth shall pave the way to large-scale molecular wire devices. © 2001 American Institute of Physics.-
dc.languageeng-
dc.relation.ispartofApplied Physics Letters-
dc.titlePatterned growth of single-walled carbon nanotubes on full 4-inch wafers-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1063/1.1429294-
dc.identifier.scopuseid_2-s2.0-0035981001-
dc.identifier.volume79-
dc.identifier.issue27-
dc.identifier.spage4571-
dc.identifier.epage4573-
dc.identifier.isiWOS:000172835400032-

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