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Article: Enhanced CVD approach to extensive nanotube networks with directionality

TitleEnhanced CVD approach to extensive nanotube networks with directionality
Authors
Issue Date2000
Citation
Advanced Materials, 2000, v. 12, n. 12, p. 890-894 How to Cite?
AbstractA chemical vapor deposition (CVD) approach to grow nanotubes on elevated tower structures fabricated on silicon substrates is developed. The growth of single-walled carbon nanotube (SWNT) under this CVD is presented in terms of yield, length, and directionality. Extensive networks of suspended SWNT with a high degree of orientation are obtained.
Persistent Identifierhttp://hdl.handle.net/10722/334054
ISSN
2023 Impact Factor: 27.4
2023 SCImago Journal Rankings: 9.191
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorFranklin, Nathan R.-
dc.contributor.authorDai, Hongjie-
dc.date.accessioned2023-10-20T06:45:19Z-
dc.date.available2023-10-20T06:45:19Z-
dc.date.issued2000-
dc.identifier.citationAdvanced Materials, 2000, v. 12, n. 12, p. 890-894-
dc.identifier.issn0935-9648-
dc.identifier.urihttp://hdl.handle.net/10722/334054-
dc.description.abstractA chemical vapor deposition (CVD) approach to grow nanotubes on elevated tower structures fabricated on silicon substrates is developed. The growth of single-walled carbon nanotube (SWNT) under this CVD is presented in terms of yield, length, and directionality. Extensive networks of suspended SWNT with a high degree of orientation are obtained.-
dc.languageeng-
dc.relation.ispartofAdvanced Materials-
dc.titleEnhanced CVD approach to extensive nanotube networks with directionality-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1002/1521-4095(200006)12:12<890::AID-ADMA890>3.0.CO;2-K-
dc.identifier.scopuseid_2-s2.0-0033707594-
dc.identifier.volume12-
dc.identifier.issue12-
dc.identifier.spage890-
dc.identifier.epage894-
dc.identifier.isiWOS:000087851400007-

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