Carbon nanotube tipped atomic force microscopy for measurement of <100 nm etch morphology on semiconductors

Abstract

The use of carbon nanotubes as tips in atomic force microscopy for a systematic study of dry etching pattern transfer in GaAs is described. The GaAs samples are patterned via electron beam lithography and then etched using magnetron reactive ion or chemically assisted ion beam processing. The technique allows diagnosis, in air, of etched features with scale sizes of <100 nm. © 1998 American Institute of Physics.