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- Publisher Website: 10.1063/1.126107
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Article: Electrical measurements of individual semiconducting single-walled carbon nanotubes of various diameters
Title | Electrical measurements of individual semiconducting single-walled carbon nanotubes of various diameters |
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Authors | |
Issue Date | 2000 |
Citation | Applied Physics Letters, 2000, v. 76, n. 12, p. 1597-1599 How to Cite? |
Abstract | Individual semiconducting single-walled carbon nanotubes (SWNTs) of various diameters are studied by electrical measurements. Transport through a semiconducting SWNT involves thermal activation at high temperatures, and tunneling through a reverse biased metal-tube junction at low temperatures. Under high bias voltages, current-voltage (I-V) characteristics of semiconducting SWNTs exhibit pronounced asymmetry with respect to the bias polarity, as a result of local gating. SWNT transistors that mimic conventional p-metal-oxide-semiconductor field-effect transistor with similar I-V characteristics and high transconductance are enabled. © 2000 American Institute of Physics. |
Persistent Identifier | http://hdl.handle.net/10722/334013 |
ISSN | 2023 Impact Factor: 3.5 2023 SCImago Journal Rankings: 0.976 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Zhou, Chongwu | - |
dc.contributor.author | Kong, Jing | - |
dc.contributor.author | Dai, Hongjie | - |
dc.date.accessioned | 2023-10-20T06:44:53Z | - |
dc.date.available | 2023-10-20T06:44:53Z | - |
dc.date.issued | 2000 | - |
dc.identifier.citation | Applied Physics Letters, 2000, v. 76, n. 12, p. 1597-1599 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10722/334013 | - |
dc.description.abstract | Individual semiconducting single-walled carbon nanotubes (SWNTs) of various diameters are studied by electrical measurements. Transport through a semiconducting SWNT involves thermal activation at high temperatures, and tunneling through a reverse biased metal-tube junction at low temperatures. Under high bias voltages, current-voltage (I-V) characteristics of semiconducting SWNTs exhibit pronounced asymmetry with respect to the bias polarity, as a result of local gating. SWNT transistors that mimic conventional p-metal-oxide-semiconductor field-effect transistor with similar I-V characteristics and high transconductance are enabled. © 2000 American Institute of Physics. | - |
dc.language | eng | - |
dc.relation.ispartof | Applied Physics Letters | - |
dc.title | Electrical measurements of individual semiconducting single-walled carbon nanotubes of various diameters | - |
dc.type | Article | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1063/1.126107 | - |
dc.identifier.scopus | eid_2-s2.0-0000071366 | - |
dc.identifier.volume | 76 | - |
dc.identifier.issue | 12 | - |
dc.identifier.spage | 1597 | - |
dc.identifier.epage | 1599 | - |
dc.identifier.isi | WOS:000085857100037 | - |