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Article: Step-by-Step Electrocrystallization Processes to Make Multiblock Magnetic Molecular Heterostructures

TitleStep-by-Step Electrocrystallization Processes to Make Multiblock Magnetic Molecular Heterostructures
Authors
Issue Date17-May-2023
PublisherAmerican Chemical Society
Citation
Journal of the American Chemical Society, 2023, v. 145, n. 26, p. 14288-14297 How to Cite?
Abstract

Assembling conductive or magnetic heterostructures by bulk inorganic materials is important for making functional electronic or spintronic devices, such as semiconductive p-doped and n-doped silicon for P–N junction diodes, alternating ferromagnetic and nonmagnetic conductive layers used in giant magnetoresistance (GMR). Nonetheless, there have been few demonstrations of conductive or magnetic heterostructures made by discrete molecules. It is of fundamental interest to prepare and investigate heterostructures based on molecular conductors or molecular magnets, such as single-molecule magnets (SMMs). Herein, we demonstrate the fabrication of a series of molecular heterostructures composed of (TTF)2M(pdms)2 (TTF = tetrathiafulvalene, M = Co(II), Zn(II), Ni(II), H2pdms = 1,2-bis(methanesulfonamido)benzene) multiple building blocks through a well-controlled step-by-step electrocrystallization growth process, where the Co(pdms)2, Ni(pdms)2, and Zn(pdms)2 anionic complex is a SMM, paramagnetic, and diamagnetic molecule, respectively. Magnetic and SMM properties of the heterostructures were characterized and compared to the parentage (TTF)2Co(pdms)2 complex. This study presents the first methodology for creating molecule-based magnetic heterostructural systems by electrocrystallization.


Persistent Identifierhttp://hdl.handle.net/10722/331372
ISSN
2023 Impact Factor: 14.4
2023 SCImago Journal Rankings: 5.489
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorWan, Qingyun-
dc.contributor.authorWakizaka, Masanori-
dc.contributor.authorFunakoshi, Nobuto-
dc.contributor.authorShen, Yongbing-
dc.contributor.authorChe, Chi-Ming-
dc.contributor.authorYamashita, Masahiro-
dc.date.accessioned2023-09-21T06:55:10Z-
dc.date.available2023-09-21T06:55:10Z-
dc.date.issued2023-05-17-
dc.identifier.citationJournal of the American Chemical Society, 2023, v. 145, n. 26, p. 14288-14297-
dc.identifier.issn0002-7863-
dc.identifier.urihttp://hdl.handle.net/10722/331372-
dc.description.abstract<p>Assembling conductive or magnetic heterostructures by bulk inorganic materials is important for making functional electronic or spintronic devices, such as semiconductive p-doped and n-doped silicon for P–N junction diodes, alternating ferromagnetic and nonmagnetic conductive layers used in giant magnetoresistance (GMR). Nonetheless, there have been few demonstrations of conductive or magnetic heterostructures made by discrete molecules. It is of fundamental interest to prepare and investigate heterostructures based on molecular conductors or molecular magnets, such as single-molecule magnets (SMMs). Herein, we demonstrate the fabrication of a series of molecular heterostructures composed of (TTF)<sub>2</sub>M(pdms)<sub>2</sub> (TTF = tetrathiafulvalene, M = Co(II), Zn(II), Ni(II), H<sub>2</sub>pdms = 1,2-bis(methanesulfonamido)benzene) multiple building blocks through a well-controlled step-by-step electrocrystallization growth process, where the Co(pdms)<sub>2</sub>, Ni(pdms)<sub>2</sub>, and Zn(pdms)<sub>2</sub> anionic complex is a SMM, paramagnetic, and diamagnetic molecule, respectively. Magnetic and SMM properties of the heterostructures were characterized and compared to the parentage (TTF)<sub>2</sub>Co(pdms)<sub>2</sub> complex. This study presents the first methodology for creating molecule-based magnetic heterostructural systems by electrocrystallization.</p>-
dc.languageeng-
dc.publisherAmerican Chemical Society-
dc.relation.ispartofJournal of the American Chemical Society-
dc.titleStep-by-Step Electrocrystallization Processes to Make Multiblock Magnetic Molecular Heterostructures-
dc.typeArticle-
dc.identifier.doi10.1021/jacs.3c02571-
dc.identifier.scopuseid_2-s2.0-85160709256-
dc.identifier.volume145-
dc.identifier.issue26-
dc.identifier.spage14288-
dc.identifier.epage14297-
dc.identifier.eissn1520-5126-
dc.identifier.isiWOS:001012128500001-
dc.identifier.issnl0002-7863-

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