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Article: Extraordinary thermoelectric performance, thermal stability and mechanical properties of n-type Mg3Sb1.5Bi0.5 through multi-dopants at interstitial site

TitleExtraordinary thermoelectric performance, thermal stability and mechanical properties of n-type Mg3Sb1.5Bi0.5 through multi-dopants at interstitial site
Authors
KeywordsDoping diagram
Electronegativity
Mg3Sb2-based
Multiple dopants
Thermoelectric
Issue Date15-Sep-2022
PublisherElsevier
Citation
Materials Today Physics, 2022, v. 27 How to Cite?
AbstractMg3Sb2-based thermoelectric materials have attracted much interest since the discovery of their excellent n-type thermoelectric performance with excess Mg content and proper dopant. Herein, we proposed a doping diagram for Mg3Sb2-based material in a binary parameters space of electronegativity difference and atomic radius difference of extrinsic elements with Mg atom. Based on this doping diagram, we designed a multiple interstitial doped TMx:Mg3Sb1.5Bi0.5 (TM = CrMnFeCoCu) material, and achieved a high dimensionless figure of merit value of 0.76 at room temperature and 1.83 at 500 ?C, respectively. The multiple interstitial dopants significantly suppress the formation of Mg vacancy, which is of great importance in protecting the electrical transport channel and improving the thermal stability. Besides, the mechanical properties are also enhanced due to the random distribution of elements in the matrix, impeding the migration of dislocations. Our work verifies the benefits of maximized sub-lattice disordering through the multi-elements doping strategy in the Mg3Sb1.5Bi0.5 material.
Persistent Identifierhttp://hdl.handle.net/10722/331089
ISSN
2023 Impact Factor: 10.0
2023 SCImago Journal Rankings: 2.304
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorJiang, F-
dc.contributor.authorFeng, T-
dc.contributor.authorZhu, YB-
dc.contributor.authorHan, ZJ-
dc.contributor.authorShu, R-
dc.contributor.authorChen, C-
dc.contributor.authorZhang, YW-
dc.contributor.authorXia, CL-
dc.contributor.authorWu, XZ-
dc.contributor.authorYu, HL-
dc.contributor.authorLiu, CY-
dc.contributor.authorChen, Y-
dc.contributor.authorLiu, WS-
dc.date.accessioned2023-09-21T06:52:39Z-
dc.date.available2023-09-21T06:52:39Z-
dc.date.issued2022-09-15-
dc.identifier.citationMaterials Today Physics, 2022, v. 27-
dc.identifier.issn2542-5293-
dc.identifier.urihttp://hdl.handle.net/10722/331089-
dc.description.abstractMg3Sb2-based thermoelectric materials have attracted much interest since the discovery of their excellent n-type thermoelectric performance with excess Mg content and proper dopant. Herein, we proposed a doping diagram for Mg3Sb2-based material in a binary parameters space of electronegativity difference and atomic radius difference of extrinsic elements with Mg atom. Based on this doping diagram, we designed a multiple interstitial doped TMx:Mg3Sb1.5Bi0.5 (TM = CrMnFeCoCu) material, and achieved a high dimensionless figure of merit value of 0.76 at room temperature and 1.83 at 500 ?C, respectively. The multiple interstitial dopants significantly suppress the formation of Mg vacancy, which is of great importance in protecting the electrical transport channel and improving the thermal stability. Besides, the mechanical properties are also enhanced due to the random distribution of elements in the matrix, impeding the migration of dislocations. Our work verifies the benefits of maximized sub-lattice disordering through the multi-elements doping strategy in the Mg3Sb1.5Bi0.5 material.-
dc.languageeng-
dc.publisherElsevier-
dc.relation.ispartofMaterials Today Physics-
dc.rightsThis work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.-
dc.subjectDoping diagram-
dc.subjectElectronegativity-
dc.subjectMg3Sb2-based-
dc.subjectMultiple dopants-
dc.subjectThermoelectric-
dc.titleExtraordinary thermoelectric performance, thermal stability and mechanical properties of n-type Mg3Sb1.5Bi0.5 through multi-dopants at interstitial site-
dc.typeArticle-
dc.identifier.doi10.1016/j.mtphys.2022.100835-
dc.identifier.scopuseid_2-s2.0-85138031035-
dc.identifier.volume27-
dc.identifier.eissn2542-5293-
dc.identifier.isiWOS:000862771300006-
dc.publisher.placeAMSTERDAM-
dc.identifier.issnl2542-5293-

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