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Article: Metastable 1T′-phase group VIB transition metal dichalcogenide crystals

TitleMetastable 1T′-phase group VIB transition metal dichalcogenide crystals
Authors
Issue Date2021
Citation
Nature Materials, 2021, v. 20, n. 8, p. 1113-1120 How to Cite?
AbstractMetastable 1T′-phase transition metal dichalcogenides (1T′-TMDs) with semi-metallic natures have attracted increasing interest owing to their uniquely distorted structures and fascinating phase-dependent physicochemical properties. However, the synthesis of high-quality metastable 1T′-TMD crystals, especially for the group VIB TMDs, remains a challenge. Here, we report a general synthetic method for the large-scale preparation of metastable 1T′-phase group VIB TMDs, including WS2, WSe2, MoS2, MoSe2, WS2xSe2(1−x) and MoS2xSe2(1−x). We solve the crystal structures of 1T′-WS2, -WSe2, -MoS2 and -MoSe2 with single-crystal X-ray diffraction. The as-prepared 1T′-WS2 exhibits thickness-dependent intrinsic superconductivity, showing critical transition temperatures of 8.6 K for the thickness of 90.1 nm and 5.7 K for the single layer, which we attribute to the high intrinsic carrier concentration and the semi-metallic nature of 1T′-WS2. This synthesis method will allow a more systematic investigation of the intrinsic properties of metastable TMDs.
Persistent Identifierhttp://hdl.handle.net/10722/329701
ISSN
2023 Impact Factor: 37.2
2023 SCImago Journal Rankings: 14.231
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLai, Zhuangchai-
dc.contributor.authorHe, Qiyuan-
dc.contributor.authorTran, Thu Ha-
dc.contributor.authorRepaka, D. V.Maheswar-
dc.contributor.authorZhou, Dong Dong-
dc.contributor.authorSun, Ying-
dc.contributor.authorXi, Shibo-
dc.contributor.authorLi, Yongxin-
dc.contributor.authorChaturvedi, Apoorva-
dc.contributor.authorTan, Chaoliang-
dc.contributor.authorChen, Bo-
dc.contributor.authorNam, Gwang Hyeon-
dc.contributor.authorLi, Bing-
dc.contributor.authorLing, Chongyi-
dc.contributor.authorZhai, Wei-
dc.contributor.authorShi, Zhenyu-
dc.contributor.authorHu, Dianyi-
dc.contributor.authorSharma, Vinay-
dc.contributor.authorHu, Zhaoning-
dc.contributor.authorChen, Ye-
dc.contributor.authorZhang, Zhicheng-
dc.contributor.authorYu, Yifu-
dc.contributor.authorRenshaw Wang, Xiao-
dc.contributor.authorRamanujan, Raju V.-
dc.contributor.authorMa, Yanming-
dc.contributor.authorHippalgaonkar, Kedar-
dc.contributor.authorZhang, Hua-
dc.date.accessioned2023-08-09T03:34:42Z-
dc.date.available2023-08-09T03:34:42Z-
dc.date.issued2021-
dc.identifier.citationNature Materials, 2021, v. 20, n. 8, p. 1113-1120-
dc.identifier.issn1476-1122-
dc.identifier.urihttp://hdl.handle.net/10722/329701-
dc.description.abstractMetastable 1T′-phase transition metal dichalcogenides (1T′-TMDs) with semi-metallic natures have attracted increasing interest owing to their uniquely distorted structures and fascinating phase-dependent physicochemical properties. However, the synthesis of high-quality metastable 1T′-TMD crystals, especially for the group VIB TMDs, remains a challenge. Here, we report a general synthetic method for the large-scale preparation of metastable 1T′-phase group VIB TMDs, including WS2, WSe2, MoS2, MoSe2, WS2xSe2(1−x) and MoS2xSe2(1−x). We solve the crystal structures of 1T′-WS2, -WSe2, -MoS2 and -MoSe2 with single-crystal X-ray diffraction. The as-prepared 1T′-WS2 exhibits thickness-dependent intrinsic superconductivity, showing critical transition temperatures of 8.6 K for the thickness of 90.1 nm and 5.7 K for the single layer, which we attribute to the high intrinsic carrier concentration and the semi-metallic nature of 1T′-WS2. This synthesis method will allow a more systematic investigation of the intrinsic properties of metastable TMDs.-
dc.languageeng-
dc.relation.ispartofNature Materials-
dc.titleMetastable 1T′-phase group VIB transition metal dichalcogenide crystals-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1038/s41563-021-00971-y-
dc.identifier.pmid33859384-
dc.identifier.scopuseid_2-s2.0-85104751146-
dc.identifier.volume20-
dc.identifier.issue8-
dc.identifier.spage1113-
dc.identifier.epage1120-
dc.identifier.eissn1476-4660-
dc.identifier.isiWOS:000640493800002-

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