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Article: Evaporated tellurium thin films for p-type field-effect transistors and circuits

TitleEvaporated tellurium thin films for p-type field-effect transistors and circuits
Authors
Issue Date2020
Citation
Nature Nanotechnology, 2020, v. 15, n. 1, p. 53-58 How to Cite?
AbstractThere is an emerging need for semiconductors that can be processed at near ambient temperature with high mobility and device performance. Although multiple n-type options have been identified, the development of their p-type counterparts remains limited. Here, we report the realization of tellurium thin films through thermal evaporation at cryogenic temperatures for fabrication of high-performance wafer-scale p-type field-effect transistors. We achieve an effective hole mobility of ~35 cm2V−1s−1, on/off current ratio of ~104 and subthreshold swing of 108 mV dec−1 on an 8-nm-thick film. High-performance tellurium p-type field-effect transistors are fabricated on a wide range of substrates including glass and plastic, further demonstrating the broad applicability of this material. Significantly, three-dimensional circuits are demonstrated by integrating multi-layered transistors on a single chip using sequential lithography, deposition and lift-off processes. Finally, various functional logic gates and circuits are demonstrated.
Persistent Identifierhttp://hdl.handle.net/10722/329592
ISSN
2023 Impact Factor: 38.1
2023 SCImago Journal Rankings: 14.577
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorZhao, Chunsong-
dc.contributor.authorTan, Chaoliang-
dc.contributor.authorLien, Der Hsien-
dc.contributor.authorSong, Xiaohui-
dc.contributor.authorAmani, Matin-
dc.contributor.authorHettick, Mark-
dc.contributor.authorNyein, Hnin Yin Yin-
dc.contributor.authorYuan, Zhen-
dc.contributor.authorLi, Lu-
dc.contributor.authorScott, Mary C.-
dc.contributor.authorJavey, Ali-
dc.date.accessioned2023-08-09T03:33:54Z-
dc.date.available2023-08-09T03:33:54Z-
dc.date.issued2020-
dc.identifier.citationNature Nanotechnology, 2020, v. 15, n. 1, p. 53-58-
dc.identifier.issn1748-3387-
dc.identifier.urihttp://hdl.handle.net/10722/329592-
dc.description.abstractThere is an emerging need for semiconductors that can be processed at near ambient temperature with high mobility and device performance. Although multiple n-type options have been identified, the development of their p-type counterparts remains limited. Here, we report the realization of tellurium thin films through thermal evaporation at cryogenic temperatures for fabrication of high-performance wafer-scale p-type field-effect transistors. We achieve an effective hole mobility of ~35 cm2V−1s−1, on/off current ratio of ~104 and subthreshold swing of 108 mV dec−1 on an 8-nm-thick film. High-performance tellurium p-type field-effect transistors are fabricated on a wide range of substrates including glass and plastic, further demonstrating the broad applicability of this material. Significantly, three-dimensional circuits are demonstrated by integrating multi-layered transistors on a single chip using sequential lithography, deposition and lift-off processes. Finally, various functional logic gates and circuits are demonstrated.-
dc.languageeng-
dc.relation.ispartofNature Nanotechnology-
dc.titleEvaporated tellurium thin films for p-type field-effect transistors and circuits-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1038/s41565-019-0585-9-
dc.identifier.pmid31844286-
dc.identifier.scopuseid_2-s2.0-85076620434-
dc.identifier.volume15-
dc.identifier.issue1-
dc.identifier.spage53-
dc.identifier.epage58-
dc.identifier.eissn1748-3395-
dc.identifier.isiWOS:000510815600008-

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