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Article: A vertical AlGaN DUV light-emitting diode fabricated by wafer bonding and sapphire thinning technology

TitleA vertical AlGaN DUV light-emitting diode fabricated by wafer bonding and sapphire thinning technology
Authors
Yan, JYuan, JJiang, YZhu, HChoi, HWWang, Y
Issue Date2022
Citation
Applied Physics Express, 2022, v. 15, p. 032003 How to Cite?
DOI: http://dx.doi.org/10.35848/1882-0786/ac4e24
Persistent Identifierhttp://hdl.handle.net/10722/323640
ISI Accession Number ID
WOS:000757634600001

 

DC FieldValueLanguage
dc.contributor.authorYan, J-
dc.contributor.authorYuan, J-
dc.contributor.authorJiang, Y-
dc.contributor.authorZhu, H-
dc.contributor.authorChoi, HW-
dc.contributor.authorWang, Y-
dc.date.accessioned2023-01-08T07:10:12Z-
dc.date.available2023-01-08T07:10:12Z-
dc.date.issued2022-
dc.identifier.citationApplied Physics Express, 2022, v. 15, p. 032003-
dc.identifier.urihttp://hdl.handle.net/10722/323640-
dc.languageeng-
dc.relation.ispartofApplied Physics Express-
dc.titleA vertical AlGaN DUV light-emitting diode fabricated by wafer bonding and sapphire thinning technology-
dc.typeArticle-
dc.identifier.emailChoi, HW: hwchoi@hku.hk-
dc.identifier.authorityChoi, HW=rp00108-
dc.identifier.doi10.35848/1882-0786/ac4e24-
dc.identifier.hkuros343207-
dc.identifier.volume15-
dc.identifier.spage032003-
dc.identifier.epage032003-
dc.identifier.isiWOS:000757634600001-

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