File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article:  Ta/HfO 2 memristors: from device physics to neural networks

Title Ta/HfO 2 memristors: from device physics to neural networks
Authors
Jiang, HLi, CXia, Q
Issue Date2022
Citation
Japanese Journal of Applied Physics, 2022, v. 61, p. SM0802 How to Cite?
DOI: http://dx.doi.org/10.35848/1347-4065/ac665d
Persistent Identifierhttp://hdl.handle.net/10722/322705
ISI Accession Number ID
WOS:000813905300001

 

DC FieldValueLanguage
dc.contributor.authorJiang, H-
dc.contributor.authorLi, C-
dc.contributor.authorXia, Q-
dc.date.accessioned2022-11-14T08:30:50Z-
dc.date.available2022-11-14T08:30:50Z-
dc.date.issued2022-
dc.identifier.citationJapanese Journal of Applied Physics, 2022, v. 61, p. SM0802-
dc.identifier.urihttp://hdl.handle.net/10722/322705-
dc.languageeng-
dc.relation.ispartofJapanese Journal of Applied Physics-
dc.title Ta/HfO 2 memristors: from device physics to neural networks -
dc.typeArticle-
dc.identifier.emailLi, C: canl@hku.hk-
dc.identifier.authorityLi, C=rp02706-
dc.identifier.doi10.35848/1347-4065/ac665d-
dc.identifier.hkuros341831-
dc.identifier.volume61-
dc.identifier.spageSM0802-
dc.identifier.epageSM0802-
dc.identifier.isiWOS:000813905300001-

Export via OAI-PMH Interface in XML Formats

OR

Export to Other Non-XML Formats