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Article: Ultra-narrow linewidth laser based on a semiconductor gain chip and extended Si3N4 Bragg grating

TitleUltra-narrow linewidth laser based on a semiconductor gain chip and extended Si3N4 Bragg grating
Authors
Xiang, ChaoMorton, Paul A.Bowers, John E.
Issue Date2019
Citation
Optics Letters, 2019, v. 44, n. 15, p. 3825-3828 How to Cite?
DOI: http://dx.doi.org/10.1364/OL.44.003825
AbstractWe demonstrate ultra-narrow linewidth fixed wavelength hybrid lasers composing a semiconductor gain chip and extended silicon nitride Bragg grating. Fabricated ultra-low κ Bragg gratings provide a narrow bandwidth and high side-lobe suppression ratio. A single-wavelength 1544 nm hybrid extended-distributed Bragg reflector laser with 24 mW output power and a Lorentzian linewidth of 320 Hz is demonstrated, providing a high-performance light source for on- and off-chip applications.
Persistent Identifierhttp://hdl.handle.net/10722/322022
ISSN
0146-9592
2023 Impact Factor: 3.1
2023 SCImago Journal Rankings: 1.040
ISI Accession Number ID
WOS:000478039100055

 

DC FieldValueLanguage
dc.contributor.authorXiang, Chao-
dc.contributor.authorMorton, Paul A.-
dc.contributor.authorBowers, John E.-
dc.date.accessioned2022-11-03T02:23:04Z-
dc.date.available2022-11-03T02:23:04Z-
dc.date.issued2019-
dc.identifier.citationOptics Letters, 2019, v. 44, n. 15, p. 3825-3828-
dc.identifier.issn0146-9592-
dc.identifier.urihttp://hdl.handle.net/10722/322022-
dc.description.abstractWe demonstrate ultra-narrow linewidth fixed wavelength hybrid lasers composing a semiconductor gain chip and extended silicon nitride Bragg grating. Fabricated ultra-low κ Bragg gratings provide a narrow bandwidth and high side-lobe suppression ratio. A single-wavelength 1544 nm hybrid extended-distributed Bragg reflector laser with 24 mW output power and a Lorentzian linewidth of 320 Hz is demonstrated, providing a high-performance light source for on- and off-chip applications.-
dc.languageeng-
dc.relation.ispartofOptics Letters-
dc.titleUltra-narrow linewidth laser based on a semiconductor gain chip and extended Si3N4 Bragg grating-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1364/OL.44.003825-
dc.identifier.pmid31368975-
dc.identifier.scopuseid_2-s2.0-85070933071-
dc.identifier.volume44-
dc.identifier.issue15-
dc.identifier.spage3825-
dc.identifier.epage3828-
dc.identifier.eissn1539-4794-
dc.identifier.isiWOS:000478039100055-

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