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Conference Paper: Enhancing the dielectric constant of oxides via acceptor-donor co-doping

TitleEnhancing the dielectric constant of oxides via acceptor-donor co-doping
Authors
Issue Date2021
PublisherSPIE.
Citation
Oxide-based materials and devices XII, SPIE OPTO (Online), 6-11 March 2021. In Oxide-based materials and devices XII At SPIE OPTO: Proceedings of SPIE Volume 11687, 6-11 March 2021, Online Only, United States, v. 11687 How to Cite?
AbstractAiming to enhance the dielectric constant and maintaining a relatively low dielectric loss, transparent acceptor-donor (Cu-Ga) co-doped ZnO films were fabricated on c-sapphire using pulsed laser deposition. With Ga=0.5 wt% and Cu=8 wt%, the dielectric constant was optimised while the dielectric loss is relatively low ( 204 and 0.27 respectively at the frequency of 1 kHz). The dielectric constant is stable over a wide range of frequency of ~10-106 Hz. The film has good optical transmittance (>75 %) in the visible wavelength range (450-800 nm). Ac conductivity study reveals two relaxation processes in the sample, namely the correlated barrier hopping (CBH) and the small polaron tunneling (SPT). The enhancement of the dielectric constant was ascribed to the formation of new defect complexes induced by the acceptor-donor doping; and the CBH and SPT of electrons between these neighboring defect complexes.
Persistent Identifierhttp://hdl.handle.net/10722/319762
ISSN
2023 SCImago Journal Rankings: 0.152

 

DC FieldValueLanguage
dc.contributor.authorHuang, D-
dc.contributor.authorShi, Y-
dc.contributor.authorLing, FCC-
dc.date.accessioned2022-10-14T05:19:17Z-
dc.date.available2022-10-14T05:19:17Z-
dc.date.issued2021-
dc.identifier.citationOxide-based materials and devices XII, SPIE OPTO (Online), 6-11 March 2021. In Oxide-based materials and devices XII At SPIE OPTO: Proceedings of SPIE Volume 11687, 6-11 March 2021, Online Only, United States, v. 11687-
dc.identifier.issn0277-786X-
dc.identifier.urihttp://hdl.handle.net/10722/319762-
dc.description.abstractAiming to enhance the dielectric constant and maintaining a relatively low dielectric loss, transparent acceptor-donor (Cu-Ga) co-doped ZnO films were fabricated on c-sapphire using pulsed laser deposition. With Ga=0.5 wt% and Cu=8 wt%, the dielectric constant was optimised while the dielectric loss is relatively low ( 204 and 0.27 respectively at the frequency of 1 kHz). The dielectric constant is stable over a wide range of frequency of ~10-106 Hz. The film has good optical transmittance (>75 %) in the visible wavelength range (450-800 nm). Ac conductivity study reveals two relaxation processes in the sample, namely the correlated barrier hopping (CBH) and the small polaron tunneling (SPT). The enhancement of the dielectric constant was ascribed to the formation of new defect complexes induced by the acceptor-donor doping; and the CBH and SPT of electrons between these neighboring defect complexes.-
dc.languageeng-
dc.publisherSPIE.-
dc.relation.ispartofOxide-based materials and devices XII At SPIE OPTO: Proceedings of SPIE Volume 11687, 6-11 March 2021, Online Only, United States-
dc.rightsOxide-based materials and devices XII At SPIE OPTO: Proceedings of SPIE Volume 11687, 6-11 March 2021, Online Only, United States. Copyright © SPIE.-
dc.rightsCopyright XXXX (year) Society of Photo‑Optical Instrumentation Engineers (SPIE). One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this publication for a fee or for commercial purposes, and modification of the contents of the publication are prohibited. This article is available online at https://doi.org/[DOI]-
dc.titleEnhancing the dielectric constant of oxides via acceptor-donor co-doping-
dc.typeConference_Paper-
dc.identifier.emailLing, FCC: ccling@hkucc.hku.hk-
dc.identifier.authorityLing, FCC=rp00747-
dc.identifier.doi10.1117/12.2586393-
dc.identifier.hkuros339368-
dc.identifier.volume11687-
dc.identifier.spage1168707-
dc.identifier.epage1168707-
dc.publisher.placeUnited States-

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