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- Publisher Website: 10.1021/acs.nanolett.1c00860
- Scopus: eid_2-s2.0-85104275414
- PMID: 33792310
- WOS: WOS:000641160500082
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Article: Enhanced Carrier Transport in Strongly Coupled, Epitaxially Fused CdSe Nanocrystal Solids
Title | Enhanced Carrier Transport in Strongly Coupled, Epitaxially Fused CdSe Nanocrystal Solids |
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Authors | |
Keywords | cation exchange charge transport electronic coupling epitaxially fused nanocrystal solid transistor |
Issue Date | 2021 |
Citation | Nano Letters, 2021, v. 21, n. 7, p. 3318-3324 How to Cite? |
Abstract | Strongly coupled, epitaxially fused colloidal nanocrystal (NC) solids are promising solution-processable semiconductors to realize optoelectronic devices with high carrier mobilities. Here, we demonstrate sequential, solid-state cation exchange reactions to transform epitaxially connected PbSe NC thin films into Cu2Se nanostructured thin-film intermediates and then successfully to achieve zinc-blende, CdSe NC solids with wide epitaxial necking along {100} facets. Transient photoconductivity measurements probe carrier transport at nanometer length scales and show a photoconductance of 0.28(1) cm2 V-1 s-1, the highest among CdSe NC solids reported. Atomic-layer deposition of a thin Al2O3 layer infiltrates and protects the structure from fusing into a polycrystalline thin film during annealing and further improves the photoconductance to 1.71(5) cm2 V-1 s-1 and the diffusion length to 760 nm. We fabricate field-effect transistors to study carrier transport at micron length scales and realize high electron mobilities of 35(3) cm2 V-1 s-1 with on-off ratios of 106 after doping. |
Persistent Identifier | http://hdl.handle.net/10722/318920 |
ISSN | 2023 Impact Factor: 9.6 2023 SCImago Journal Rankings: 3.411 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Zhao, Qinghua | - |
dc.contributor.author | Gouget, Guillaume | - |
dc.contributor.author | Guo, Jiacen | - |
dc.contributor.author | Yang, Shengsong | - |
dc.contributor.author | Zhao, Tianshuo | - |
dc.contributor.author | Straus, Daniel B. | - |
dc.contributor.author | Qian, Chengyang | - |
dc.contributor.author | Oh, Nuri | - |
dc.contributor.author | Wang, Han | - |
dc.contributor.author | Murray, Christopher B. | - |
dc.contributor.author | Kagan, Cherie R. | - |
dc.date.accessioned | 2022-10-11T12:24:51Z | - |
dc.date.available | 2022-10-11T12:24:51Z | - |
dc.date.issued | 2021 | - |
dc.identifier.citation | Nano Letters, 2021, v. 21, n. 7, p. 3318-3324 | - |
dc.identifier.issn | 1530-6984 | - |
dc.identifier.uri | http://hdl.handle.net/10722/318920 | - |
dc.description.abstract | Strongly coupled, epitaxially fused colloidal nanocrystal (NC) solids are promising solution-processable semiconductors to realize optoelectronic devices with high carrier mobilities. Here, we demonstrate sequential, solid-state cation exchange reactions to transform epitaxially connected PbSe NC thin films into Cu2Se nanostructured thin-film intermediates and then successfully to achieve zinc-blende, CdSe NC solids with wide epitaxial necking along {100} facets. Transient photoconductivity measurements probe carrier transport at nanometer length scales and show a photoconductance of 0.28(1) cm2 V-1 s-1, the highest among CdSe NC solids reported. Atomic-layer deposition of a thin Al2O3 layer infiltrates and protects the structure from fusing into a polycrystalline thin film during annealing and further improves the photoconductance to 1.71(5) cm2 V-1 s-1 and the diffusion length to 760 nm. We fabricate field-effect transistors to study carrier transport at micron length scales and realize high electron mobilities of 35(3) cm2 V-1 s-1 with on-off ratios of 106 after doping. | - |
dc.language | eng | - |
dc.relation.ispartof | Nano Letters | - |
dc.subject | cation exchange | - |
dc.subject | charge transport | - |
dc.subject | electronic coupling | - |
dc.subject | epitaxially fused | - |
dc.subject | nanocrystal solid | - |
dc.subject | transistor | - |
dc.title | Enhanced Carrier Transport in Strongly Coupled, Epitaxially Fused CdSe Nanocrystal Solids | - |
dc.type | Article | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1021/acs.nanolett.1c00860 | - |
dc.identifier.pmid | 33792310 | - |
dc.identifier.scopus | eid_2-s2.0-85104275414 | - |
dc.identifier.volume | 21 | - |
dc.identifier.issue | 7 | - |
dc.identifier.spage | 3318 | - |
dc.identifier.epage | 3324 | - |
dc.identifier.eissn | 1530-6992 | - |
dc.identifier.isi | WOS:000641160500082 | - |