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- Publisher Website: 10.1021/acsenergylett.0c02521
- Scopus: eid_2-s2.0-85098999736
- WOS: WOS:000609250200024
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Article: Defect-Tolerant TiO2-Coated and Discretized Photoanodes for >600 h of Stable Photoelectrochemical Water Oxidation
Title | Defect-Tolerant TiO2-Coated and Discretized Photoanodes for >600 h of Stable Photoelectrochemical Water Oxidation |
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Authors | |
Issue Date | 2021 |
Citation | ACS Energy Letters, 2021, v. 6, n. 1, p. 193-200 How to Cite? |
Abstract | Arrays of GaAs nanowires have been grown by selective-area metal-organic chemical-vapor deposition (MOCVD) onto photoactive planar Si substrates. This tandem, vertical-wire-array-on-planar absorber was then coated by atomic layer deposition (ALD) of an amorphous TiO2 (a-TiO2) stabilization layer, followed by deposition of a NiOx electrocatalyst layer. The tandem planar Si/nanowire GaAs/a-TiO2/NiOx photoanodes exhibited continuous solar-driven water oxidation in 1.0 M KOH(aq) for over 600 h without substantial photocurrent decay. The preservation of the nanowire morphology and structural integrity during >600 h of photoanodic operation confirms the benefits of mitigating and isolating nanoscale defects via the architecture of discretized absorbers on a self-passivating and insulating substrate. Nanoscale morphology and compositions of the photoanode after 600 h of testing were characterized to reveal the self-limiting corrosion behavior. It provides a promising approach to develop efficient but otherwise unstable absorbers such as III-V materials into defect-tolerant, corrosion-resistant photoanodes. |
Persistent Identifier | http://hdl.handle.net/10722/318896 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Shen, Xin | - |
dc.contributor.author | Yao, Maoqing | - |
dc.contributor.author | Sun, Ke | - |
dc.contributor.author | Zhao, Tianshuo | - |
dc.contributor.author | He, Yulian | - |
dc.contributor.author | Chi, Chun Yung | - |
dc.contributor.author | Zhou, Chongwu | - |
dc.contributor.author | Dapkus, Paul Daniel | - |
dc.contributor.author | Lewis, Nathan S. | - |
dc.contributor.author | Hu, Shu | - |
dc.date.accessioned | 2022-10-11T12:24:48Z | - |
dc.date.available | 2022-10-11T12:24:48Z | - |
dc.date.issued | 2021 | - |
dc.identifier.citation | ACS Energy Letters, 2021, v. 6, n. 1, p. 193-200 | - |
dc.identifier.uri | http://hdl.handle.net/10722/318896 | - |
dc.description.abstract | Arrays of GaAs nanowires have been grown by selective-area metal-organic chemical-vapor deposition (MOCVD) onto photoactive planar Si substrates. This tandem, vertical-wire-array-on-planar absorber was then coated by atomic layer deposition (ALD) of an amorphous TiO2 (a-TiO2) stabilization layer, followed by deposition of a NiOx electrocatalyst layer. The tandem planar Si/nanowire GaAs/a-TiO2/NiOx photoanodes exhibited continuous solar-driven water oxidation in 1.0 M KOH(aq) for over 600 h without substantial photocurrent decay. The preservation of the nanowire morphology and structural integrity during >600 h of photoanodic operation confirms the benefits of mitigating and isolating nanoscale defects via the architecture of discretized absorbers on a self-passivating and insulating substrate. Nanoscale morphology and compositions of the photoanode after 600 h of testing were characterized to reveal the self-limiting corrosion behavior. It provides a promising approach to develop efficient but otherwise unstable absorbers such as III-V materials into defect-tolerant, corrosion-resistant photoanodes. | - |
dc.language | eng | - |
dc.relation.ispartof | ACS Energy Letters | - |
dc.title | Defect-Tolerant TiO2-Coated and Discretized Photoanodes for >600 h of Stable Photoelectrochemical Water Oxidation | - |
dc.type | Article | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1021/acsenergylett.0c02521 | - |
dc.identifier.scopus | eid_2-s2.0-85098999736 | - |
dc.identifier.volume | 6 | - |
dc.identifier.issue | 1 | - |
dc.identifier.spage | 193 | - |
dc.identifier.epage | 200 | - |
dc.identifier.eissn | 2380-8195 | - |
dc.identifier.isi | WOS:000609250200024 | - |