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Article: RGB Arrays for Micro-Light-Emitting Diode Applications Using Nanoporous GaN Embedded with Quantum Dots

TitleRGB Arrays for Micro-Light-Emitting Diode Applications Using Nanoporous GaN Embedded with Quantum Dots
Authors
Keywordscolor down-conversion
light scattering
micro-LED display
nanoporous GaN
quantum dot
Issue Date2020
Citation
ACS Applied Materials and Interfaces, 2020, v. 12, n. 27, p. 30890-30895 How to Cite?
AbstractThe multiple light scattering of nanoporous (NP) GaN was systematically studied and applied to the color down-conversion for micro-light-emitting diode (LED) display applications. The transport mean free path (TMFP) in NP GaN is 660 nm at 450 nm (light wavelength), and it decreases with a decreasing wavelength. It was observed that the short TMFP of the NP GaN increased the light extinction coefficient at 370 nm by 11 times. Colloidal QDs were loaded into a half 4″ wafer scale NP GaN, and 96 and 100% of light conversion efficiencies for green and red were achieved, respectively. By loading green and red QDs selectively into NP GaN mesas, we demonstrated the RGB microarrays based on the blue-violet pumping light with green and red color converting regions.
Persistent Identifierhttp://hdl.handle.net/10722/318852
ISSN
2023 Impact Factor: 8.3
2023 SCImago Journal Rankings: 2.058
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorKang, Jin Ho-
dc.contributor.authorLi, Bingjun-
dc.contributor.authorZhao, Tianshuo-
dc.contributor.authorJohar, Muhammad Ali-
dc.contributor.authorLin, Chien Chung-
dc.contributor.authorFang, Yen Hsiang-
dc.contributor.authorKuo, Wei Hung-
dc.contributor.authorLiang, Kai Ling-
dc.contributor.authorHu, Shu-
dc.contributor.authorRyu, Sang Wan-
dc.contributor.authorHan, Jung-
dc.date.accessioned2022-10-11T12:24:42Z-
dc.date.available2022-10-11T12:24:42Z-
dc.date.issued2020-
dc.identifier.citationACS Applied Materials and Interfaces, 2020, v. 12, n. 27, p. 30890-30895-
dc.identifier.issn1944-8244-
dc.identifier.urihttp://hdl.handle.net/10722/318852-
dc.description.abstractThe multiple light scattering of nanoporous (NP) GaN was systematically studied and applied to the color down-conversion for micro-light-emitting diode (LED) display applications. The transport mean free path (TMFP) in NP GaN is 660 nm at 450 nm (light wavelength), and it decreases with a decreasing wavelength. It was observed that the short TMFP of the NP GaN increased the light extinction coefficient at 370 nm by 11 times. Colloidal QDs were loaded into a half 4″ wafer scale NP GaN, and 96 and 100% of light conversion efficiencies for green and red were achieved, respectively. By loading green and red QDs selectively into NP GaN mesas, we demonstrated the RGB microarrays based on the blue-violet pumping light with green and red color converting regions.-
dc.languageeng-
dc.relation.ispartofACS Applied Materials and Interfaces-
dc.subjectcolor down-conversion-
dc.subjectlight scattering-
dc.subjectmicro-LED display-
dc.subjectnanoporous GaN-
dc.subjectquantum dot-
dc.titleRGB Arrays for Micro-Light-Emitting Diode Applications Using Nanoporous GaN Embedded with Quantum Dots-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1021/acsami.0c00839-
dc.identifier.pmid32519834-
dc.identifier.scopuseid_2-s2.0-85088207026-
dc.identifier.volume12-
dc.identifier.issue27-
dc.identifier.spage30890-
dc.identifier.epage30895-
dc.identifier.eissn1944-8252-
dc.identifier.isiWOS:000550633400090-

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