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- Publisher Website: 10.1021/jacs.9b06652
- Scopus: eid_2-s2.0-85072629002
- PMID: 31496238
- WOS: WOS:000488322500027
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Article: General Synthetic Route to High-Quality Colloidal III-V Semiconductor Quantum Dots Based on Pnictogen Chlorides
Title | General Synthetic Route to High-Quality Colloidal III-V Semiconductor Quantum Dots Based on Pnictogen Chlorides |
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Authors | |
Issue Date | 2019 |
Citation | Journal of the American Chemical Society, 2019, v. 141, n. 38, p. 15145-15152 How to Cite? |
Abstract | The synthesis of colloidal III-V quantum dots (QDs), particularly of the arsenides and antimonides, has been limited by the lack of stable and available group V precursors. In this work, we exploit accessible InCl3- and pnictogen chloride-oleylamine as precursors to synthesize III-V QDs. Through coreduction reactions of the precursors, we achieve size- and stoichiometry-tunable binary InAs and InSb as well as ternary alloy InAs1-xSbx QDs. On the basis of structural, analytical, optical, and electrical characterization of the QDs and their thin-film assemblies, we study the effects of alloying on their particle formation and optoelectronic properties. We introduce a hydrazine-free hybrid ligand-exchange process to improve carrier transport in III-V QD thin films and realize InAs QD field-effect transistors with electron mobility > 5 cm2/(V s). We demonstrate that III-V QD thin films are promising candidate materials for infrared devices and show InAs1-xSbx QD photoconductors with superior short-wavelength infrared (SWIR) photoresponse than those of the binary QD devices. |
Persistent Identifier | http://hdl.handle.net/10722/318790 |
ISSN | 2023 Impact Factor: 14.4 2023 SCImago Journal Rankings: 5.489 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Zhao, Tianshuo | - |
dc.contributor.author | Oh, Nuri | - |
dc.contributor.author | Jishkariani, Davit | - |
dc.contributor.author | Zhang, Mingliang | - |
dc.contributor.author | Wang, Han | - |
dc.contributor.author | Li, Na | - |
dc.contributor.author | Lee, Jennifer D. | - |
dc.contributor.author | Zeng, Chenjie | - |
dc.contributor.author | Muduli, Manisha | - |
dc.contributor.author | Choi, Hak Jong | - |
dc.contributor.author | Su, Dong | - |
dc.contributor.author | Murray, Christopher B. | - |
dc.contributor.author | Kagan, Cherie R. | - |
dc.date.accessioned | 2022-10-11T12:24:34Z | - |
dc.date.available | 2022-10-11T12:24:34Z | - |
dc.date.issued | 2019 | - |
dc.identifier.citation | Journal of the American Chemical Society, 2019, v. 141, n. 38, p. 15145-15152 | - |
dc.identifier.issn | 0002-7863 | - |
dc.identifier.uri | http://hdl.handle.net/10722/318790 | - |
dc.description.abstract | The synthesis of colloidal III-V quantum dots (QDs), particularly of the arsenides and antimonides, has been limited by the lack of stable and available group V precursors. In this work, we exploit accessible InCl3- and pnictogen chloride-oleylamine as precursors to synthesize III-V QDs. Through coreduction reactions of the precursors, we achieve size- and stoichiometry-tunable binary InAs and InSb as well as ternary alloy InAs1-xSbx QDs. On the basis of structural, analytical, optical, and electrical characterization of the QDs and their thin-film assemblies, we study the effects of alloying on their particle formation and optoelectronic properties. We introduce a hydrazine-free hybrid ligand-exchange process to improve carrier transport in III-V QD thin films and realize InAs QD field-effect transistors with electron mobility > 5 cm2/(V s). We demonstrate that III-V QD thin films are promising candidate materials for infrared devices and show InAs1-xSbx QD photoconductors with superior short-wavelength infrared (SWIR) photoresponse than those of the binary QD devices. | - |
dc.language | eng | - |
dc.relation.ispartof | Journal of the American Chemical Society | - |
dc.title | General Synthetic Route to High-Quality Colloidal III-V Semiconductor Quantum Dots Based on Pnictogen Chlorides | - |
dc.type | Article | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1021/jacs.9b06652 | - |
dc.identifier.pmid | 31496238 | - |
dc.identifier.scopus | eid_2-s2.0-85072629002 | - |
dc.identifier.volume | 141 | - |
dc.identifier.issue | 38 | - |
dc.identifier.spage | 15145 | - |
dc.identifier.epage | 15152 | - |
dc.identifier.eissn | 1520-5126 | - |
dc.identifier.isi | WOS:000488322500027 | - |