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- Publisher Website: 10.1021/acsnano.5b02734
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Article: Selective p- and n-Doping of Colloidal PbSe Nanowires to Construct Electronic and Optoelectronic Devices
Title | Selective p- and n-Doping of Colloidal PbSe Nanowires to Construct Electronic and Optoelectronic Devices |
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Authors | |
Keywords | CMOS inverter colloidal nanowires PbSe photodiode pn junction selective doping |
Issue Date | 2015 |
Citation | ACS Nano, 2015, v. 9, n. 7, p. 7536-7544 How to Cite? |
Abstract | We report the controlled and selective doping of colloidal PbSe nanowire arrays to define pn junctions for electronic and optoelectronic applications. The nanowires are remotely doped through their surface, p-type by exposure to oxygen and n-type by introducing a stoichiometric imbalance in favor of excess lead. By employing a patternable poly(methyl)methacrylate blocking layer, we define pn junctions in the nanowires along their length. We demonstrate integrated complementary metal-oxide semiconductor inverters in axially doped nanowires that have gains of 15 and a near full signal swing. We also show that these pn junction PbSe nanowire arrays form fast switching photodiodes with photocurrents that can be optimized in a gated-diode structure. Doping of the colloidal nanowires is compatible with device fabrication on flexible plastic substrates, promising a low-cost, solution-based route to high-performance nanowire devices. |
Persistent Identifier | http://hdl.handle.net/10722/318599 |
ISSN | 2023 Impact Factor: 15.8 2023 SCImago Journal Rankings: 4.593 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Oh, Soong Ju | - |
dc.contributor.author | Uswachoke, Chawit | - |
dc.contributor.author | Zhao, Tianshuo | - |
dc.contributor.author | Choi, Ji Hyuk | - |
dc.contributor.author | Diroll, Benjamin T. | - |
dc.contributor.author | Murray, Christopher B. | - |
dc.contributor.author | Kagan, Cherie R. | - |
dc.date.accessioned | 2022-10-11T12:24:07Z | - |
dc.date.available | 2022-10-11T12:24:07Z | - |
dc.date.issued | 2015 | - |
dc.identifier.citation | ACS Nano, 2015, v. 9, n. 7, p. 7536-7544 | - |
dc.identifier.issn | 1936-0851 | - |
dc.identifier.uri | http://hdl.handle.net/10722/318599 | - |
dc.description.abstract | We report the controlled and selective doping of colloidal PbSe nanowire arrays to define pn junctions for electronic and optoelectronic applications. The nanowires are remotely doped through their surface, p-type by exposure to oxygen and n-type by introducing a stoichiometric imbalance in favor of excess lead. By employing a patternable poly(methyl)methacrylate blocking layer, we define pn junctions in the nanowires along their length. We demonstrate integrated complementary metal-oxide semiconductor inverters in axially doped nanowires that have gains of 15 and a near full signal swing. We also show that these pn junction PbSe nanowire arrays form fast switching photodiodes with photocurrents that can be optimized in a gated-diode structure. Doping of the colloidal nanowires is compatible with device fabrication on flexible plastic substrates, promising a low-cost, solution-based route to high-performance nanowire devices. | - |
dc.language | eng | - |
dc.relation.ispartof | ACS Nano | - |
dc.subject | CMOS inverter | - |
dc.subject | colloidal nanowires | - |
dc.subject | PbSe | - |
dc.subject | photodiode | - |
dc.subject | pn junction | - |
dc.subject | selective doping | - |
dc.title | Selective p- and n-Doping of Colloidal PbSe Nanowires to Construct Electronic and Optoelectronic Devices | - |
dc.type | Article | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1021/acsnano.5b02734 | - |
dc.identifier.scopus | eid_2-s2.0-84938118615 | - |
dc.identifier.volume | 9 | - |
dc.identifier.issue | 7 | - |
dc.identifier.spage | 7536 | - |
dc.identifier.epage | 7544 | - |
dc.identifier.eissn | 1936-086X | - |
dc.identifier.isi | WOS:000358823200091 | - |