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Article: Engineering charge injection and charge transport for high performance PbSe nanocrystal thin film devices and circuits

TitleEngineering charge injection and charge transport for high performance PbSe nanocrystal thin film devices and circuits
Authors
Keywordsbandlike transport
charge injection
charge transport
circuit
field-effect transistor
PbSe
Issue Date2014
Citation
Nano Letters, 2014, v. 14, n. 11, p. 6210-6216 How to Cite?
AbstractWe study charge injection and transport in PbSe nanocrystal thin films. By engineering the contact metallurgy and nanocrystal ligand exchange chemistry and surface passivation, we demonstrate partial Fermi-level pinning at the metal-nanocrystal interface and an insulator-to-metal transition with increased coupling and doping, allowing us to design high conductivity and mobility PbSe nanocrystal films. We construct complementary nanocrystal circuits from n-type and p-type transistors realized from a single nanocrystal material by selecting the contact metallurgy.
Persistent Identifierhttp://hdl.handle.net/10722/318575
ISSN
2022 Impact Factor: 10.8
2020 SCImago Journal Rankings: 4.853

 

DC FieldValueLanguage
dc.contributor.authorOh, Soong Ju-
dc.contributor.authorWang, Zhuqing-
dc.contributor.authorBerry, Nathaniel E.-
dc.contributor.authorChoi, Ji Hyuk-
dc.contributor.authorZhao, Tianshuo-
dc.contributor.authorGaulding, E. Ashley-
dc.contributor.authorPaik, Taejong-
dc.contributor.authorLai, Yuming-
dc.contributor.authorMurray, Christopher B.-
dc.contributor.authorKagan, Cherie R.-
dc.date.accessioned2022-10-11T12:24:04Z-
dc.date.available2022-10-11T12:24:04Z-
dc.date.issued2014-
dc.identifier.citationNano Letters, 2014, v. 14, n. 11, p. 6210-6216-
dc.identifier.issn1530-6984-
dc.identifier.urihttp://hdl.handle.net/10722/318575-
dc.description.abstractWe study charge injection and transport in PbSe nanocrystal thin films. By engineering the contact metallurgy and nanocrystal ligand exchange chemistry and surface passivation, we demonstrate partial Fermi-level pinning at the metal-nanocrystal interface and an insulator-to-metal transition with increased coupling and doping, allowing us to design high conductivity and mobility PbSe nanocrystal films. We construct complementary nanocrystal circuits from n-type and p-type transistors realized from a single nanocrystal material by selecting the contact metallurgy.-
dc.languageeng-
dc.relation.ispartofNano Letters-
dc.subjectbandlike transport-
dc.subjectcharge injection-
dc.subjectcharge transport-
dc.subjectcircuit-
dc.subjectfield-effect transistor-
dc.subjectPbSe-
dc.titleEngineering charge injection and charge transport for high performance PbSe nanocrystal thin film devices and circuits-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1021/nl502491d-
dc.identifier.scopuseid_2-s2.0-84910108789-
dc.identifier.volume14-
dc.identifier.issue11-
dc.identifier.spage6210-
dc.identifier.epage6216-
dc.identifier.eissn1530-6992-

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