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- Publisher Website: 10.1021/nn403752d
- Scopus: eid_2-s2.0-84884932798
- WOS: WOS:000330016900091
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Article: In situ repair of high-performance, flexible nanocrystal electronics for large-area fabrication and operation in air
Title | In situ repair of high-performance, flexible nanocrystal electronics for large-area fabrication and operation in air |
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Authors | |
Keywords | cadmium selenide encapsulation field-effect transistor flexible electronics nanocrystal passivation recovery |
Issue Date | 2013 |
Citation | ACS Nano, 2013, v. 7, n. 9, p. 8275-8283 How to Cite? |
Abstract | Colloidal semiconductor nanocrystal (NC) thin films have been integrated in light-emitting diodes, solar cells, field-effect transistors (FETs), and flexible, electronic circuits. However, NC devices are typically fabricated and operated in an inert environment since the reactive surface and high surface-to-volume ratio of NC materials render them sensitive to oxygen, water, and many solvents. This sensitivity has limited device scaling and large-scale device integration achievable by conventional fabrication technologies, which generally require ambient air and wet-chemical processing. Here, we present a simple, effective route to reverse the detrimental effects of chemical and environmental exposure, by incorporating, in situ, a chemical agent, namely, indium metal, which is thermally triggered to diffuse and repair the damage. Taking advantage of the recovery process, CdSe NC FETs are processed in air, patterned using the solvents of lithography, and packaged by atomic layer deposition to form large-area and flexible high-performance NC devices that operate stably in air. © 2013 American Chemical Society. |
Persistent Identifier | http://hdl.handle.net/10722/318545 |
ISSN | 2023 Impact Factor: 15.8 2023 SCImago Journal Rankings: 4.593 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Choi, Ji Hyuk | - |
dc.contributor.author | Oh, Soong Ju | - |
dc.contributor.author | Lai, Yuming | - |
dc.contributor.author | Kim, David K. | - |
dc.contributor.author | Zhao, Tianshuo | - |
dc.contributor.author | Fafarman, Aaron T. | - |
dc.contributor.author | Diroll, Benjamin T. | - |
dc.contributor.author | Murray, Christopher B. | - |
dc.contributor.author | Kagan, Cherie R. | - |
dc.date.accessioned | 2022-10-11T12:24:00Z | - |
dc.date.available | 2022-10-11T12:24:00Z | - |
dc.date.issued | 2013 | - |
dc.identifier.citation | ACS Nano, 2013, v. 7, n. 9, p. 8275-8283 | - |
dc.identifier.issn | 1936-0851 | - |
dc.identifier.uri | http://hdl.handle.net/10722/318545 | - |
dc.description.abstract | Colloidal semiconductor nanocrystal (NC) thin films have been integrated in light-emitting diodes, solar cells, field-effect transistors (FETs), and flexible, electronic circuits. However, NC devices are typically fabricated and operated in an inert environment since the reactive surface and high surface-to-volume ratio of NC materials render them sensitive to oxygen, water, and many solvents. This sensitivity has limited device scaling and large-scale device integration achievable by conventional fabrication technologies, which generally require ambient air and wet-chemical processing. Here, we present a simple, effective route to reverse the detrimental effects of chemical and environmental exposure, by incorporating, in situ, a chemical agent, namely, indium metal, which is thermally triggered to diffuse and repair the damage. Taking advantage of the recovery process, CdSe NC FETs are processed in air, patterned using the solvents of lithography, and packaged by atomic layer deposition to form large-area and flexible high-performance NC devices that operate stably in air. © 2013 American Chemical Society. | - |
dc.language | eng | - |
dc.relation.ispartof | ACS Nano | - |
dc.subject | cadmium selenide | - |
dc.subject | encapsulation | - |
dc.subject | field-effect transistor | - |
dc.subject | flexible electronics | - |
dc.subject | nanocrystal | - |
dc.subject | passivation | - |
dc.subject | recovery | - |
dc.title | In situ repair of high-performance, flexible nanocrystal electronics for large-area fabrication and operation in air | - |
dc.type | Article | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1021/nn403752d | - |
dc.identifier.scopus | eid_2-s2.0-84884932798 | - |
dc.identifier.volume | 7 | - |
dc.identifier.issue | 9 | - |
dc.identifier.spage | 8275 | - |
dc.identifier.epage | 8283 | - |
dc.identifier.eissn | 1936-086X | - |
dc.identifier.isi | WOS:000330016900091 | - |