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Conference Paper: Electrical resistivity & thermal stability of smooth silver thin film for nanoscale optoelectronic devices

TitleElectrical resistivity & thermal stability of smooth silver thin film for nanoscale optoelectronic devices
Authors
Logeeswaran, V. J.Katzenmeyer, A.Islam, M. SaifKobayashi, Nobuhiko P.Wu, W.Chaturvedi, P.Fang, NicholasWang, S. Y.Williams, R. Stanley
KeywordsAg-Ge
Molecular electronics
Nanophotonics
Optical metamaterials
Sheet resistance
Surface roughness
Thermal properties
Issue Date2008
Citation
2008 8th IEEE Conference on Nanotechnology, IEEE-NANO, 2008, p. 92-94 How to Cite?
DOI: http://dx.doi.org/10.1109/NANO.2008.34
AbstractWe discuss the electrical resistivity and thermal stability of smooth thin silver (Ag) films characterized by significantly lower root mean square (RMS) surface roughness, peak-to-valley height distribution, and grain-size distribution. The smooth film was prepared by using a very thin (~1-2 nm) nucleation layer of evaporated germanium (Ge) prior to Ag evaporation. The sheet resistance of the rough silver (10nm Ag) film is RAg-rough ~51 Ω/sq compared to the smooth silver (10nm Ag/2nm Ge) film with R Ag-smooth ~22 Ω/sq. The smooth Ag is also shown to be thermally more stable for temperatures less than 120°C. © 2008 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/318453

 

DC FieldValueLanguage
dc.contributor.authorLogeeswaran, V. J.-
dc.contributor.authorKatzenmeyer, A.-
dc.contributor.authorIslam, M. Saif-
dc.contributor.authorKobayashi, Nobuhiko P.-
dc.contributor.authorWu, W.-
dc.contributor.authorChaturvedi, P.-
dc.contributor.authorFang, Nicholas-
dc.contributor.authorWang, S. Y.-
dc.contributor.authorWilliams, R. Stanley-
dc.date.accessioned2022-10-11T12:23:47Z-
dc.date.available2022-10-11T12:23:47Z-
dc.date.issued2008-
dc.identifier.citation2008 8th IEEE Conference on Nanotechnology, IEEE-NANO, 2008, p. 92-94-
dc.identifier.urihttp://hdl.handle.net/10722/318453-
dc.description.abstractWe discuss the electrical resistivity and thermal stability of smooth thin silver (Ag) films characterized by significantly lower root mean square (RMS) surface roughness, peak-to-valley height distribution, and grain-size distribution. The smooth film was prepared by using a very thin (~1-2 nm) nucleation layer of evaporated germanium (Ge) prior to Ag evaporation. The sheet resistance of the rough silver (10nm Ag) film is RAg-rough ~51 Ω/sq compared to the smooth silver (10nm Ag/2nm Ge) film with R Ag-smooth ~22 Ω/sq. The smooth Ag is also shown to be thermally more stable for temperatures less than 120°C. © 2008 IEEE.-
dc.languageeng-
dc.relation.ispartof2008 8th IEEE Conference on Nanotechnology, IEEE-NANO-
dc.subjectAg-Ge-
dc.subjectMolecular electronics-
dc.subjectNanophotonics-
dc.subjectOptical metamaterials-
dc.subjectSheet resistance-
dc.subjectSurface roughness-
dc.subjectThermal properties-
dc.titleElectrical resistivity & thermal stability of smooth silver thin film for nanoscale optoelectronic devices-
dc.typeConference_Paper-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/NANO.2008.34-
dc.identifier.scopuseid_2-s2.0-55349100921-
dc.identifier.spage92-
dc.identifier.epage94-

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