Supplementary
-
Citations:
- Appears in Collections:
postgraduate thesis: Some positron annihilation studies on highly doped and supersaturated N-type silicon
| Title | Some positron annihilation studies on highly doped and supersaturated N-type silicon |
|---|---|
| Authors | |
| Advisors | |
| Issue Date | 2004 |
| Publisher | The University of Hong Kong (Pokfulam, Hong Kong) |
| Citation | Ho, K. [何競豐]. (2004). Some positron annihilation studies on highly doped and supersaturated N-type silicon. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3028710 |
| Degree | Doctor of Philosophy |
| Subject | Positron annihilation. Electron spectroscopy. Silicon crystals - Defects. |
| Dept/Program | Physics |
| Persistent Identifier | http://hdl.handle.net/10722/31539 |
| HKU Library Item ID | b3028710 |
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | Beling, CD | - |
| dc.contributor.advisor | Fung, SHY | - |
| dc.contributor.author | Ho, King-fung. | - |
| dc.contributor.author | 何競豐. | - |
| dc.date.issued | 2004 | - |
| dc.identifier.citation | Ho, K. [何競豐]. (2004). Some positron annihilation studies on highly doped and supersaturated N-type silicon. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3028710 | - |
| dc.identifier.uri | http://hdl.handle.net/10722/31539 | - |
| dc.language | eng | - |
| dc.publisher | The University of Hong Kong (Pokfulam, Hong Kong) | - |
| dc.relation.ispartof | HKU Theses Online (HKUTO) | - |
| dc.rights | The author retains all proprietary rights, (such as patent rights) and the right to use in future works. | - |
| dc.rights | This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License. | - |
| dc.source.uri | http://hub.hku.hk/bib/B30287108 | - |
| dc.subject.lcsh | Positron annihilation. | - |
| dc.subject.lcsh | Electron spectroscopy. | - |
| dc.subject.lcsh | Silicon crystals - Defects. | - |
| dc.title | Some positron annihilation studies on highly doped and supersaturated N-type silicon | - |
| dc.type | PG_Thesis | - |
| dc.identifier.hkul | b3028710 | - |
| dc.description.thesisname | Doctor of Philosophy | - |
| dc.description.thesislevel | Doctoral | - |
| dc.description.thesisdiscipline | Physics | - |
| dc.description.nature | published_or_final_version | - |
| dc.description.nature | abstract | - |
| dc.description.nature | toc | - |
| dc.identifier.doi | 10.5353/th_b3028710 | - |
| dc.date.hkucongregation | 2005 | - |
| dc.identifier.mmsid | 991010015939703414 | - |