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Article: Low-Temperature-Processed High-Performance Pentacene OTFTs with Optimal Nd-Ti Oxynitride Mixture as Gate Dielectric
Title | Low-Temperature-Processed High-Performance Pentacene OTFTs with Optimal Nd-Ti Oxynitride Mixture as Gate Dielectric |
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Authors | |
Issue Date | 2022 |
Citation | Materials, 2022, v. 15, p. 2255 How to Cite? |
Persistent Identifier | http://hdl.handle.net/10722/315160 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | MA, Y | - |
dc.contributor.author | Lai, PT | - |
dc.contributor.author | Tang, WM | - |
dc.date.accessioned | 2022-08-05T09:41:16Z | - |
dc.date.available | 2022-08-05T09:41:16Z | - |
dc.date.issued | 2022 | - |
dc.identifier.citation | Materials, 2022, v. 15, p. 2255 | - |
dc.identifier.uri | http://hdl.handle.net/10722/315160 | - |
dc.language | eng | - |
dc.relation.ispartof | Materials | - |
dc.title | Low-Temperature-Processed High-Performance Pentacene OTFTs with Optimal Nd-Ti Oxynitride Mixture as Gate Dielectric | - |
dc.type | Article | - |
dc.identifier.email | Lai, PT: laip@eee.hku.hk | - |
dc.identifier.authority | Lai, PT=rp00130 | - |
dc.identifier.doi | 10.3390/ma15062255 | - |
dc.identifier.hkuros | 335018 | - |
dc.identifier.volume | 15 | - |
dc.identifier.spage | 2255 | - |
dc.identifier.epage | 2255 | - |
dc.identifier.isi | WOS:000775035500001 | - |