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Article: Low-Temperature-Processed High-Performance Pentacene OTFTs with Optimal Nd-Ti Oxynitride Mixture as Gate Dielectric

TitleLow-Temperature-Processed High-Performance Pentacene OTFTs with Optimal Nd-Ti Oxynitride Mixture as Gate Dielectric
Authors
MA, YLai, PTTang, WM
Issue Date2022
Citation
Materials, 2022, v. 15, p. 2255 How to Cite?
DOI: http://dx.doi.org/10.3390/ma15062255
Persistent Identifierhttp://hdl.handle.net/10722/315160
ISI Accession Number ID
WOS:000775035500001

 

DC FieldValueLanguage
dc.contributor.authorMA, Y-
dc.contributor.authorLai, PT-
dc.contributor.authorTang, WM-
dc.date.accessioned2022-08-05T09:41:16Z-
dc.date.available2022-08-05T09:41:16Z-
dc.date.issued2022-
dc.identifier.citationMaterials, 2022, v. 15, p. 2255-
dc.identifier.urihttp://hdl.handle.net/10722/315160-
dc.languageeng-
dc.relation.ispartofMaterials-
dc.titleLow-Temperature-Processed High-Performance Pentacene OTFTs with Optimal Nd-Ti Oxynitride Mixture as Gate Dielectric-
dc.typeArticle-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.identifier.doi10.3390/ma15062255-
dc.identifier.hkuros335018-
dc.identifier.volume15-
dc.identifier.spage2255-
dc.identifier.epage2255-
dc.identifier.isiWOS:000775035500001-

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