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Article: Enhanced screening on remote phonon scattering in InGaZnO thin-film transistor by using Ge gate electrode

TitleEnhanced screening on remote phonon scattering in InGaZnO thin-film transistor by using Ge gate electrode
Authors
SU, HTang, WMLai, PT
Issue Date2021
Citation
Journal of Applied Physics, 2021, v. 130, p. 015302 How to Cite?
DOI: http://dx.doi.org/10.1063/5.0049153
Persistent Identifierhttp://hdl.handle.net/10722/314777
ISI Accession Number ID
WOS:000681705200012

 

DC FieldValueLanguage
dc.contributor.authorSU, H-
dc.contributor.authorTang, WM-
dc.contributor.authorLai, PT-
dc.date.accessioned2022-08-05T09:34:24Z-
dc.date.available2022-08-05T09:34:24Z-
dc.date.issued2021-
dc.identifier.citationJournal of Applied Physics, 2021, v. 130, p. 015302-
dc.identifier.urihttp://hdl.handle.net/10722/314777-
dc.languageeng-
dc.relation.ispartofJournal of Applied Physics-
dc.titleEnhanced screening on remote phonon scattering in InGaZnO thin-film transistor by using Ge gate electrode-
dc.typeArticle-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.identifier.doi10.1063/5.0049153-
dc.identifier.hkuros335010-
dc.identifier.volume130-
dc.identifier.spage015302-
dc.identifier.epage015302-
dc.identifier.isiWOS:000681705200012-

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