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Article: Integrating band engineering with point defect scattering for high thermoelectric performance in Bi2Si2Te6

TitleIntegrating band engineering with point defect scattering for high thermoelectric performance in Bi2Si2Te6
Authors
Issue Date2022
Citation
Chemical Engineering Journal, 2022, v. 441, p. 135968 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/314690

 

DC FieldValueLanguage
dc.contributor.authorChen, C-
dc.contributor.authorShen, D-
dc.contributor.authorXia, C-
dc.contributor.authorZhang, Z-
dc.contributor.authorWang, W-
dc.contributor.authorZhang, Q-
dc.contributor.authorChen, Y-
dc.date.accessioned2022-08-05T09:32:50Z-
dc.date.available2022-08-05T09:32:50Z-
dc.date.issued2022-
dc.identifier.citationChemical Engineering Journal, 2022, v. 441, p. 135968-
dc.identifier.urihttp://hdl.handle.net/10722/314690-
dc.languageeng-
dc.relation.ispartofChemical Engineering Journal-
dc.titleIntegrating band engineering with point defect scattering for high thermoelectric performance in Bi2Si2Te6-
dc.typeArticle-
dc.identifier.emailChen, Y: yuechen@hku.hk-
dc.identifier.authorityChen, Y=rp01925-
dc.identifier.hkuros334980-
dc.identifier.volume441-
dc.identifier.spage135968-
dc.identifier.epage135968-

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