File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: A high-k Cu-doped ZnO film formed via Ga-ion implantation: The acceptor-donor co-doping approach

TitleA high-k Cu-doped ZnO film formed via Ga-ion implantation: The acceptor-donor co-doping approach
Authors
Shi, YHuang, DKentsch, UZhou, SQLing, FCC
Issue Date2022
PublisherElsevier Science SA. The Journal's web site is located at http://www.elsevier.com/locate/jallcom
Citation
Journal of Alloys and Compounds, 2022, v. 911, p. 165057:1-7 How to Cite?
DOI: http://dx.doi.org/10.1016/j.jallcom.2022.165057
Persistent Identifierhttp://hdl.handle.net/10722/314282
ISI Accession Number ID
WOS:000797728900004

 

DC FieldValueLanguage
dc.contributor.authorShi, Y-
dc.contributor.authorHuang, D-
dc.contributor.authorKentsch, U-
dc.contributor.authorZhou, SQ-
dc.contributor.authorLing, FCC-
dc.date.accessioned2022-07-18T06:15:10Z-
dc.date.available2022-07-18T06:15:10Z-
dc.date.issued2022-
dc.identifier.citationJournal of Alloys and Compounds, 2022, v. 911, p. 165057:1-7-
dc.identifier.urihttp://hdl.handle.net/10722/314282-
dc.languageeng-
dc.publisherElsevier Science SA. The Journal's web site is located at http://www.elsevier.com/locate/jallcom-
dc.relation.ispartofJournal of Alloys and Compounds-
dc.titleA high-k Cu-doped ZnO film formed via Ga-ion implantation: The acceptor-donor co-doping approach-
dc.typeArticle-
dc.identifier.emailShi, Y: ylshi0@hku.hk-
dc.identifier.emailLing, FCC: ccling@hkucc.hku.hk-
dc.identifier.authorityLing, FCC=rp00747-
dc.identifier.doi10.1016/j.jallcom.2022.165057-
dc.identifier.hkuros334256-
dc.identifier.volume911-
dc.identifier.spage165057:1-
dc.identifier.epage7-
dc.identifier.isiWOS:000797728900004-

Export via OAI-PMH Interface in XML Formats

OR

Export to Other Non-XML Formats